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2SC4001

Part No 2SC4001
Manufacturer NEC
Catalog Hard To Find
Description NPN SILICON POWER TRANSISTOR
Sample
Rohs State rohs
ECAD Module
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Manufacturer NEC
Win Source Part Number 1125575-2SC4001
Manufacturer Homepage www.nec.com/
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian 2SC4001 CAD Model

Description

The 2SC4001 is an NPN silicon epitaxial planar transistor manufactured by NEC. This transistor is designed for use in low-noise amplifier applications, especially in VHF and UHF bands. Its characteristics make it particularly suitable for sensitive receiver front-ends.

Applications:

  • Low-Noise Amplifiers (LNAs): Used in VHF/UHF receiver front-ends to amplify weak signals with minimal noise.
  • TV Tuners: Employed in TV tuners to amplify the incoming signal.
  • Communication Receivers: Found in various communication receivers for low-noise amplification.
  • RF Amplifiers: Utilized as a small signal amplifier in RF circuits.
  • High-Frequency Amplification: Suitable for general high-frequency amplification applications.

Features:

  • NPN Silicon Epitaxial Planar Transistor: Provides amplification and switching capabilities.
  • Low Noise Figure: Minimizes signal distortion in sensitive applications.
  • High Gain: Offers good amplification characteristics.
  • High Transition Frequency (fT): Enables good high-frequency performance.
  • Small Signal Amplifier: Designed for amplifying small signals.

Benefits:

  • Excellent Low-Noise Performance: Suitable for applications requiring minimal signal distortion.
  • High Gain: Provides good amplification of weak signals.
  • Reliable Operation: Designed for consistent and dependable performance.
  • Versatile Use: Can be implemented in various low-noise amplifier circuits.
  • Optimal for VHF/UHF Bands: Specifically designed for applications in the VHF and UHF frequency ranges.

Additional Details:

The 2SC4001's key parameters include collector-emitter voltage (VCEO), collector current (IC), transition frequency (fT), and noise figure (NF). Designers should consult the device datasheet from NEC or other reliable sources to obtain specific values for these parameters. The datasheet also includes information about the transistor's gain (hFE), saturation voltage, and thermal characteristics. Proper biasing and impedance matching are crucial for achieving optimal low-noise performance. It is commonly found in VHF/UHF receiver applications that require low noise and high gain.

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