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Same model may have multiple batches, images only for reference.
PBSS5612PA,115 Nexperia USA Inc.
Same model may have multiple batches, images only for reference.

PBSS5612PA,115

Part No PBSS5612PA,115
Manufacturer Nexperia USA Inc.
Catalog Transistors (BJT) - Single
Description TRANS PNP 12V 6A SOT1061 / Trans GP BJT PNP 12V 6A 2100mW 3-Pin HUSON T/R
Datasheet
PBSS5612PA,115 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Nexperia USA Inc.
Packaging Reel package
Transistor Type PNP
Current - Collector (Ic) (Maximum) 6A
Voltage - Collector Emitter Breakdown (Maximum) 12V
Vce Saturation (Maximum) @ Ib, Ic 300mV @ 300mA, 6A
Current - Collector Cutoff (Maximum) 100nA
DC Current Gain (hFE) (Minimum) @ Ic, Vce 190 @ 2A, 2V
Power - Max 2.1W
Frequency - Transition 60MHz
Operating Temperature Range 150°C (TJ)
Mounting SMD
Package 3-UDFN
Manufacturer Package 3-HUSON (2x2)
Win Source Part Number 791392-PBSS5612PA,115
Popularity Medium
Supply and Demand Status Limited
Family Name PBSS5612PA
Introduction Date March 03, 2010
ECCN EAR99
Country of Origin China
Halogen Free Compliant
Estimated EOL Date 2022
Ultra Librarian 3D Model Ultra Librarian PBSS5612PA,115 CAD Model

Description

The Nexperia USA Inc. electronic component with part number 791392-PBSS5612PA,115 is a PNP transistor type product that has a medium popularity in the market. This product has a maximum power of 2.1W and a frequency transition of 60MHz. It has a current collector cutoff of 100nA and a DC current gain of 190 @ 2A, 2V. It is manufactured by Nexperia USA Inc..

  • Maximum Power: 2.1W
  • Frequency Transition: 60MHz
  • Current Collector Cutoff: 100nA
  • DC Current Gain: 190 @ 2A, 2V

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