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Same model may have multiple batches, images only for reference.
MJ10001 Mospec
Same model may have multiple batches, images only for reference.

MJ10001

Part No MJ10001
Manufacturer NTE
Catalog Transistors (BJT) - Single
Description TRANS NPN DARL 400V 20A TO3
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single Bipolar Transistors
Mfr NTE
Series SWITCHMODE™
Package Bag
Product Status Active
Transistor Type NPN - Darlington
Current - Collector (Ic) (Max) 20 A
Voltage - Collector Emitter Breakdown (Max) 400 V
Vce Saturation (Max) @ Ib, Ic 3V @ 1A, 20A
Current - Collector Cutoff (Max) 250µA
DC Current Gain (hFE) (Min) @ Ic, Vce 50 @ 5A, 5V
Power - Max 175 W
Temperature Range - Operating -65°C ~ 200°C (TJ)
Mounting Type Through Hole
Package / Case TO-204AA, TO-3
Supplier Device Package TO-3
Standard Package 1 pcs
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 640845-MJ10001
Ultra Librarian 3D Model Ultra Librarian MJ10001 CAD Model

Description

The MJ10001 is a high-power bipolar transistor from the SWITCHMODE™ series.

  • Power rating: 175W
  • Voltage breakdown: 400V
  • Transistor type: NPN Darlington
  • Vce saturation: 3V @ 20A
  • Applications: high current switching and amplification
  • Temperature range: -65°C to 200°C
  • Package: TO-204AA, TO-3
  • Manufacturer: NTE
  • Status: active

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Pricing & Ordering

Quantity Unit Price Ext. Price
8+ $7.0056 $56.0448
18+ $5.7482 $103.4676
27+ $5.5686 $150.3522
38+ $5.3890 $204.7820
48+ $5.2093 $250.0464
65+ $4.6704 $303.5760
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Availability: 7,500 pieces
MOQ: 8 pcs
Order Increment : 1 pcs
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