The 2SC4172M-E from ON Semiconductor is a high-performance NPN bipolar junction transistor (BJT) designed for use in a wide range of electronic applications. This versatile transistor offers a perfect blend of low power consumption and high efficiency, making it an ideal choice for designers looking to optimize their circuitry for energy-sensitive projects.
Key Features
- High Current Gain Bandwidth Product: The 2SC4172M-E provides a high fT, which is beneficial for applications requiring fast switching and accurate amplification at high frequencies.
- Low Saturation Voltage: This transistor has a low V<sub>CE(sat), reducing power loss and improving efficiency, particularly in saturation drive applications.
- High Power Dissipation: With its robust power dissipation capabilities, the 2SC4172M-E can handle higher currents and dissipate more heat, making it suitable for power-intensive applications.
- Complementary PNP Type Available: ON Semiconductor offers a complementary PNP transistor, which allows for the creation of push-pull amplifier configurations, enhancing design flexibility.
Applications
The 2SC4172M-E is designed for general-purpose amplifier and switching applications. Its characteristics make it suitable for:
- Audio amplifiers and preamplifiers
- Signal processing circuits
- Power management systems
- DC-DC converters
- Motor control circuits
Product Specifications
Parameter
Value
Collector-Emitter Voltage (V<sub>CEO)
50V
Collector Base Voltage (V<sub>CBO)
60V
Emitter Base Voltage (V<sub>EBO)
7V
Collector Current (I<sub>C)
500mA
Power Dissipation (P<sub>D)
1W
Operating and Storage Junction Temperature Range
-55°C to +150°C
The ON Semiconductor 2SC4172M-E is a reliable and efficient solution for designers seeking to enhance their electronic designs with a high-quality, general-purpose transistor.
