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MC33152VDR2G

Part No MC33152VDR2G
Manufacturer ON Semiconductor
Catalog PMIC - Gate Drivers
Description IC MOSFET DRIVER DUAL HS 8-SOIC
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Integrated Circuits
Manufacturer ON Semiconductor
Packaging Reel - TR
Status Active
Driven Configuration Low-Side
Channel Type Independent
Number of Drivers 2
Gate Type N-Channel MOSFET
Supply Voltage - Operating 6.1 V to 18 V
Logic Voltage - VIL, VIH 0.8V, 2.6V
Current - Peak Output (Source, Sink) 1.5A, 1.5A
Input Type Non-Inverting
Rise and Fall Time 36ns, 32ns
Temperature Range - Operating -40°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 8-SOIC
Win Source Part Number 1073300-MC33152VDR2G
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian MC33152VDR2G CAD Model

Description

ON Semiconductor MC33152VDR2G High-Speed Dual MOSFET Drivers

The MC33152VDR2G from ON Semiconductor is a high-performance dual non-inverting MOSFET driver designed for efficient power management and signal amplification in a wide range of applications. This integrated circuit is capable of delivering peak currents up to 1.5 A, making it an excellent choice for driving large capacitive loads with minimal delay and power dissipation. Its high-speed performance is particularly suitable for switching power supplies, motor controls, and other power conversion applications.

Encased in a compact SOIC-8 package, the MC33152VDR2G features two independent driver channels that can be used to drive a pair of MOSFETs or IGBTs. Each driver is capable of operating at frequencies up to 5 MHz, providing the rapid response needed for high-frequency switching applications. Additionally, the device includes matched rise and fall times to minimize switching losses and reduce electromagnetic interference (EMI).

The MC33152VDR2G offers a wide supply voltage range from 4.5 V to 18 V, allowing it to accommodate various logic levels and to interface easily with a range of microcontrollers and digital logic systems. This flexibility makes it a versatile choice for diverse electronic designs.

Key features of the MC33152VDR2G include:

  • Dual non-inverting outputs with high current drive capability (1.5 A peak)
  • High-speed operation with rise and fall times typically less than 25 ns
  • Wide supply voltage range from 4.5 V to 18 V
  • Low supply current with logic level input compatibility
  • Thermal shutdown protection for improved reliability
  • Matched propagation delay times for both channels
  • Under-voltage lockout with hysteresis for stable operation

With its robust design, the MC33152VDR2G incorporates protection features such as under-voltage lockout with hysteresis to ensure that the device operates within safe voltage levels, and thermal shutdown to protect against overheating. These features enhance the reliability and longevity of the device in harsh environments.

In summary, the MC33152VDR2G from ON Semiconductor is a versatile and efficient solution for driving MOSFETs and IGBTs in a variety of power management applications. Its high-speed capabilities, robust protection features, and compatibility with different logic levels make it a valuable component in the design of efficient and reliable electronic systems.

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Pricing & Ordering

Quantity Unit Price Ext. Price
55+ $0.9866 $54.2630
125+ $0.8095 $101.1875
195+ $0.7842 $152.9190
265+ $0.7589 $201.1085
345+ $0.7336 $253.0920
460+ $0.6577 $302.5420
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 3,720 pieces
MOQ: 55 pcs
Order Increment : 1 pcs
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