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MMBTA06WT1G

Part No MMBTA06WT1G
Manufacturer ON Semiconductor
Catalog Transistors (BJT) - Single
Description TRANS NPN 80V 0.5A SC70-3
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer ON Semiconductor
Packaging Reel - TR
Status Active
Transistor Polarity NPN
Maximum Current Collector 500mA
VCEO Maximum Collector-Emitter Breakdown Voltage 80V
Max Vce (sat) 250mV @ 10mA, 100mA
Collector Cut-off Current(Max) 100nA
Typical Gain (hFE) (Min) 100 @ 100mA, 1V
Maximum Power Dissipation 150mW
Frequency - Transition 100MHz
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package SC-70-3 (SOT323)
Win Source Part Number 023791-MMBTA06WT1G
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Sufficient
Application Field Used in Industrial, Power Management, Automotive
Ultra Librarian 3D Model Ultra Librarian MMBTA06WT1G CAD Model

Description

ON Semiconductor MMBTA06WT1G - NPN Bipolar Transistor

The MMBTA06WT1G is a high-performance NPN bipolar (BJT) transistor from ON Semiconductor, designed to offer a blend of efficiency and reliability for a wide range of electronic applications. This versatile transistor is housed in a compact SOT-323 package, making it suitable for space-constrained designs while providing excellent power handling capabilities.

Key Features

  • Transistor Type: NPN - This allows for efficient current amplification when a small base current controls a larger collector-emitter current.
  • Voltage Ratings: It has a collector-emitter voltage (VCEO) of 80V, which ensures that it can handle moderate voltage applications without breakdown.
  • Current Handling: The MMBTA06WT1G can manage a continuous collector current (IC) of up to 500 mA, making it suitable for driving medium-power circuits.
  • Power Dissipation: With a power dissipation of 225 mW, this transistor can sustain moderate levels of power without overheating, ensuring longevity and stable performance.
  • High Gain Bandwidth Product: It features a transition frequency (fT) of 100 MHz, which indicates good high-frequency response for applications in amplification and switching.
  • RoHS Compliant: The MMBTA06WT1G is compliant with RoHS standards, which means it is manufactured without the use of hazardous substances, making it environmentally friendly and suitable for use in various global markets.

Applications

The ON Semiconductor MMBTA06WT1G is ideal for use in a variety of electronic circuits. Its applications include, but are not limited to:

  • General-purpose amplification
  • Switching applications
  • Signal processing
  • Power management
  • Consumer electronics
  • Telecommunications equipment

Quality and Reliability

ON Semiconductor is known for its commitment to quality, and the MMBTA06WT1G is no exception. This transistor is produced with high manufacturing standards, ensuring consistent performance and reliability for the end-user. Whether for prototyping or mass production, the MMBTA06WT1G from ON Semiconductor is a solid choice for designers and engineers looking for a dependable NPN transistor.

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Pricing & Ordering

Quantity Unit Price Ext. Price
1,790+ $0.0323 $57.8170
4,350+ $0.0266 $115.7100
6,730+ $0.0258 $173.6340
9,260+ $0.0249 $230.5740
11,965+ $0.0242 $289.5530
16,045+ $0.0216 $346.5720
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 74,830 pieces
MOQ: 1790 pcs
Order Increment : 1 pcs
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