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NGTB40N65IHRTG

Part No NGTB40N65IHRTG
Manufacturer ON Semiconductor
Catalog IGBTs - Single
Description IGBT 650V 40A / IGBT
Datasheet
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products - Transistors - IGBTs - Single IGBTs
Mfr ON Semiconductor
Series *
Package Tube
Product Status Active
Base Product Number NGTB40
Standard Package 30 pcs
MSL Level Not Applicable
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 887242-NGTB40N65IHRTG
Ultra Librarian 3D Model Ultra Librarian NGTB40N65IHRTG CAD Model

Description

Introducing the NGTB40N65IHRTG IGBT from ON Semiconductor

The NGTB40N65IHRTG is a state-of-the-art insulated gate bipolar transistor (IGBT) designed and manufactured by ON Semiconductor, a leader in energy-efficient innovations. This high-performance IGBT is engineered to cater to a wide range of power electronics applications, particularly those requiring high efficiency and fast switching. It is an ideal choice for applications such as motor drives, uninterruptible power supplies (UPS), solar inverters, and electric vehicle (EV) chargers.

Featuring a robust and advanced trench gate field-stop technology, the NGTB40N65IHRTG offers an optimal balance between conduction and switching losses, resulting in an exceptional efficiency profile. This IGBT has a collector-emitter voltage (Vce) of 650V and a continuous collector current (Ic) rating of 40A at 25°C, making it capable of handling high power levels while maintaining a low thermal footprint.

The device comes in a compact and industry-standard TO-247 package, which provides excellent thermal performance and simplifies the design-in process. The package is designed to be easily mounted onto a heatsink, ensuring that the device can operate reliably even under high power and temperature conditions.

One of the standout features of the NGTB40N65IHRTG IGBT is its low on-state voltage drop, which contributes to reduced conduction losses and enhances overall system efficiency. Additionally, the device boasts a low total gate charge (Qg) and low gate-emitter threshold voltage (Vge(th)), which facilitate fast switching and reduce energy loss during the turn-on and turn-off events.

ON Semiconductor has equipped this IGBT with a co-packaged freewheeling diode, which has fast recovery characteristics and further supports the device's high-speed switching capabilities. This integrated diode not only saves board space but also simplifies the circuit design, leading to a more streamlined and cost-effective solution.

With its high performance, reliability, and energy efficiency, the NGTB40N65IHRTG from ON Semiconductor represents a top-tier choice for designers and engineers looking to optimize their power electronic systems. Its combination of advanced features ensures that it can meet the demands of the most challenging applications, while also contributing to a greener and more sustainable future.

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Pricing & Ordering

Quantity Unit Price Ext. Price
20+ $2.6064 $52.1280
47+ $2.1386 $100.5142
73+ $2.0717 $151.2341
100+ $2.0049 $200.4900
129+ $1.9381 $250.0149
173+ $1.7376 $300.6048
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 3,750 pieces
MOQ: 20 pcs
Order Increment : 1 pcs
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