The 2SB1007 is a silicon PNP epitaxial planar transistor manufactured by Rohm Semiconductor. It is designed for use in low-frequency power amplifier applications.

Applications

• Low-frequency power amplifiers
• Audio output stages
• Driver stages
• DC-DC converters

Features

• PNP Epitaxial Planar Transistor
• High Collector Current (Ic = -3A)
• Low Saturation Voltage (Vce(sat) = -0.5V max)
• High Power Dissipation

Benefits

• Efficient amplification due to low saturation voltage, reducing power loss.
• Suitable for handling substantial current in power amplifier stages.
• Reliable operation under heavy loads due to high power dissipation capability.
• Stable performance due to Rohm Semiconductor's high-quality manufacturing standards.

Additional Details

The 2SB1007 typically comes in a TO-126 package. It has a collector-emitter voltage (Vceo) of -50V and a collector-base voltage (Vcbo) of -50V. Its emitter-base voltage (Vebo) is -5V. The power dissipation is around 10W. The DC current gain (hFE) varies with collector current, but it's generally in the range of 50 to 200. The operating and storage temperature ranges from -55°C to +150°C.