The 2N5192 from STMicroelectronics is a robust and versatile NPN bipolar junction transistor (BJT) designed for use in a wide range of applications. This high-power transistor can handle significant voltage and current, making it an ideal choice for amplification and switching applications where reliability and efficiency are paramount.

Key Features

• High Current Capacity: The 2N5192 is capable of handling collector currents up to 4 A, allowing it to drive larger loads with ease.
• High Voltage Rating: With a collector-emitter voltage (VCEO) of 80 V, it can be used in circuits with higher operating voltages.
• Power Dissipation: This transistor has a maximum power dissipation of 40 W, ensuring that it can handle significant power levels without overheating.
• Complementary PNP Type: It has a complementary PNP type, the 2N5195, providing flexibility in designing push-pull amplifier configurations.

Applications

The 2N5192 is suitable for a variety of applications, including:

• Audio power amplifiers
• Power supply regulators
• Motor control circuits
• Switching applications

Quality and Reliability

STMicroelectronics is known for its commitment to quality, and the 2N5192 is no exception. Manufactured with precision and tested rigorously, this transistor ensures consistent performance and reliability for industrial and commercial applications. Its robust construction is designed to withstand the rigors of daily use, making it a dependable choice for engineers and designers.

Technical Specifications

Parameter Value Transistor Polarity NPN Collector-Emitter Voltage VCEO Max 80 V Collector Current - Continuous Ic Max 4 A Power Dissipation Pd 40 W DC Current Gain hFE 30 to 240 Operating Temperature Range -65 to +150 °C

With its combination of high current and voltage handling capabilities, along with its power dissipation and gain characteristics, the 2N5192 from STMicroelectronics stands out as a solid choice for demanding electronic applications.