STMicroelectronics 2N5195 PNP Transistor

The 2N5195 is a high-quality PNP bipolar junction transistor (BJT) developed by STMicroelectronics, a leader in the semiconductor industry. This transistor is designed for general-purpose amplification and switching applications. It features a durable construction and reliable performance, making it a preferred choice for a wide range of electronic circuits.

The 2N5195 boasts a collector-emitter voltage (V_CEO) of up to 60V and a collector current (I_C) of up to 4A, providing ample power handling capability for a variety of uses. Its power dissipation is rated at 40W, which ensures that the device can manage significant energy without compromising its integrity or lifespan.

With a transition frequency (f_T) of 4MHz, the 2N5195 is well-suited for audio frequency and low-speed switching applications. Its h_FE (DC current gain) is in a range that ensures efficient operation, typically between 30 to 240, which makes it versatile for different circuit designs.

The robustness of the 2N5195 is further highlighted by its operating junction temperature range of -65°C to +150°C, allowing it to perform reliably in extreme conditions. Its TO-3 metal case not only provides a solid structure but also aids in heat dissipation, which is crucial for maintaining stability and extending the life of the transistor.

Ideal for power amplification and switching applications, the 2N5195 from STMicroelectronics is a testament to the company's commitment to providing high-quality components that meet the demanding needs of the electronics industry. Whether for commercial, industrial, or educational purposes, this transistor is engineered to deliver consistent, top-notch performance.

For detailed specifications, application notes, and additional resources, interested parties are encouraged to visit STMicroelectronics' official website or contact their local authorized distributor.