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BUH313

Part No BUH313
Manufacturer STMicroelectronics
Catalog END - OF - LIFE
Description HIGH VOLTAGE FASTSWITCHING NPN POWER TRANSISTOR
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Manufacturer STMicroelectronics
Win Source Part Number 1155948-BUH313
Manufacturer Homepage www.st.com
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian BUH313 CAD Model

Description

STMicroelectronics BUH313 High Voltage NPN Power Transistor

The BUH313 is a robust and reliable high voltage NPN power transistor designed and manufactured by the renowned STMicroelectronics. This component is part of ST's extensive line of power transistors intended for a wide range of applications where high voltage capability and efficiency are paramount.

Key Features

  • Voltage Capabilities: The BUH313 is capable of withstanding high voltages, making it suitable for use in electronic circuits that operate at elevated voltages.
  • High Current Handling: This power transistor can handle significant currents, which is essential for applications requiring high power output.
  • Low Saturation Voltage: The low saturation voltage of the BUH313 ensures that power loss is minimized when the transistor is in the on-state, enhancing overall efficiency.
  • Speed: It offers fast switching speeds, which is beneficial for circuits that require quick response times.
  • Robustness: The BUH313 is designed to be durable and withstand tough conditions, making it suitable for industrial and commercial applications.

Applications

The BUH313 is commonly used in a variety of applications, including but not limited to:

  • Switching regulators
  • Inverters
  • Motor control systems
  • Power supply units
  • Lighting systems
  • High power amplifiers

Technical Specifications

Some of the technical specifications of the BUH313 include:

  • Collector-Emitter Voltage (Vceo): The maximum voltage between collector and emitter terminals when the base terminal is open.
  • Collector Current (Ic): The maximum continuous collector current that the transistor can handle without damage.
  • Power Dissipation (Pd): The maximum amount of power that the transistor can dissipate through heat without failing.
  • Transition Frequency (fT): The frequency at which the gain of the transistor falls to unity.

For detailed specifications and application notes, designers and engineers are encouraged to consult the official datasheet provided by STMicroelectronics. The BUH313 is a testament to ST's commitment to providing high-quality components for advanced electronic solutions.

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