STB130N6F7 - STMicroelectronics N-Channel MOSFET
The STB130N6F7 is a high-performance N-channel Power MOSFET from STMicroelectronics, a global semiconductor leader known for its innovative products and solutions. This MOSFET is part of the STripFET™ F7 series, which is renowned for its low on-resistance and low gate charge, making it highly efficient for a wide range of applications.
Key Features
- Low On-Resistance: The STB130N6F7 features an extremely low on-state resistance (R<sub>DS(on)), which enhances its efficiency in conducting electrical current.
- High Current Capability: With a continuous drain current (I<sub>D) of up to 80 A, this MOSFET can handle high current loads, making it suitable for demanding power applications.
- High Switching Performance: The fast switching speed of the STB130N6F7 minimizes energy loss during power conversion processes, contributing to overall system efficiency.
- 100% Avalanche Tested: Ensuring reliability in harsh environments, this MOSFET is guaranteed to withstand high energy pulses in avalanche and commutation modes.
- Low Gate Charge (Q<sub>g): A low gate charge allows for faster switching speeds and reduces the power required to drive the MOSFET, improving system power density.
Applications
The STB130N6F7 is designed for a variety of applications, including:
- Switching regulators
- DC/DC converters
- Motor control
- Power management solutions
- Automotive applications and more
Quality and Environmental Compliance
STMicroelectronics is committed to providing environmentally friendly products. The STB130N6F7 is compliant with various international standards, including RoHS and Halogen-free requirements, ensuring minimal environmental impact and safety for end-users.
With its robust design and advanced technology, the STB130N6F7 from STMicroelectronics is an excellent choice for designers looking to optimize their power systems with high efficiency, reliability, and performance.
