The IRFP22N60K MOSFET is a N-channel transistor with a drain-source breakdown voltage of 600V and a continuous drain current of 22A.

• Drain-Source Breakdown Voltage: 600V
• Continuous Drain Current: 22A
• Maximum Rds On: 280mOhm @ 13A, 10V
• Gate-Source Voltage(th): 5V @ 250μA
• Gate Charge (Qg) (Maximum) @ Vgs: 150nC @ 10V
• Input Capacitance (Ciss) (Maximum) @ Vds: 3570pF @ 25V
• Package: TO-247-3
• Power Dissipation (Maximum): 370W
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Gate-Source Voltage (Maximum): ±30V
• Status: Obsolete
• Supply and Demand Status: Limited
• Manufacturer Package Quantity: 500 units
• MSL Level: 1 (Unlimited)