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BUZ31 H3045A

Part No BUZ31 H3045A
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 200V 14.5A TO263
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 200V
Continuous Drain Current at 25°C 14.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 1mA
Max Input Capacitance 1120pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 95W (Tc)
Maximum Rds On at Id,Vgs 200 mOhm @ 9A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package PG-TO263-3
Dimension TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Win Source Part Number 126398-BUZ31 H3045A
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian BUZ31 H3045A CAD Model

Description

Overview

Designed for high-stress environments, the BUZ31 H3045A promises sustained performance and resilience. Its design enhances both lifecycle and reliability, making it indispensable for critical applications.

Features and Benefits

  • Extended lifecycle under continuous use
  • High thermal endurance
  • Superior reliability in critical functions
  • Optimized for high-power applications

Applications

  • Telecommunication systems
  • Heavy machinery controls
  • Defense electronics
  • Medical equipment

For scenarios demanding the utmost reliability and durability, the BUZ31 H3045A is the go-to power transistor.

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Pricing & Ordering

Quantity Unit Price Ext. Price
45+ $1.4060 $63.2700
105+ $1.1538 $121.1490
160+ $1.1176 $178.8160
215+ $1.0815 $232.5225
280+ $1.0455 $292.7400
370+ $0.9374 $346.8380
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 1,580 pieces
MOQ: 45 pcs
Order Increment : 1 pcs
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Shipping Information

Shipped from HK warehouse
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