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Same model may have multiple batches, images only for reference.
SI7900AEDN-T1-E3 Real Image
Same model may have multiple batches, images only for reference.

SI7900AEDN-T1-E3

Part No SI7900AEDN-T1-E3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET 2N-CH 20V 6A 1212-8
Datasheet
SI7900AEDN-T1-E3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Active
FET Type 2 N-Channel (Dual) Common Drain
FET Feature Logic Level Gate
Drain-Source Breakdown Voltage 20V
Continuous Drain Current at 25°C 6A
Maximum Rds On at Id,Vgs 26 mOhm @ 8.5A, 4.5V
Gate-Source Threshold Voltage 900mV @ 250μA
Max Gate Charge 16nC @ 4.5V
Maximum Power Dissipation 1.5W
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package PowerPAK 1212-8 Dual
Win Source Part Number 028689-SI7900AEDN-T1-E3
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian SI7900AEDN-T1-E3 CAD Model

Description

The Vishay SI7900AEDN-T1-E3 is a dual N-channel common drain FET transistor that has a logic level gate feature.

  • Manufacturer: Vishay
  • Win Source Part Number: 028689

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Pricing & Ordering

Quantity Unit Price Ext. Price
65+ $0.8254 $53.6510
130+ $0.7732 $100.5160
205+ $0.7471 $153.1555
290+ $0.6948 $201.4920
375+ $0.6687 $250.7625
470+ $0.6426 $302.0220
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 12,000 pieces
MOQ: 65 pcs
Order Increment : 1 pcs
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