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Same model may have multiple batches, images only for reference.
SI8404DB-T1-E1 Real Image
Same model may have multiple batches, images only for reference.

SI8404DB-T1-E1

Part No SI8404DB-T1-E1
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 8V 12.2A 2X2 4-MFP
Datasheet
SI8404DB-T1-E1 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 8V
Continuous Drain Current at 25°C 12.2A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4.5V
Gate-Source Threshold Voltage 1V @ 250μA
Max Gate Charge 33nC @ 5V
Max Input Capacitance 1950pF @ 4V
Maximum Gate-Source Voltage ±5V
Power Dissipation (Max) 2.78W (Ta), 6.25W (Tc)
Maximum Rds On at Id,Vgs 31 mOhm @ 1A, 4.5V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 4-Microfoot
Dimension 4-XFBGA, CSPBGA
Win Source Part Number 102868-SI8404DB-T1-E1
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian SI8404DB-T1-E1 CAD Model

Description

The Vishay SI8404DB-T1-E1 is an N-channel MOSFET that is designed to operate in a temperature range of -55°C to 150°C (TJ).

  • Power Dissipation: 2.78W (Ta), 6.25W (Tc)
  • Drain-Source Breakdown Voltage: 8V
  • Category: discrete semiconductor products
  • Product Status: obsolete (EOL)
  • Popularity: medium

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Quantity Unit Price Ext. Price
8+ $7.9304 $63.4432
18+ $6.5070 $117.1260
28+ $6.3037 $176.5036
38+ $6.1004 $231.8152
49+ $5.8970 $288.9530
66+ $5.2869 $348.9354
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