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Same model may have multiple batches, images only for reference.
SI7940DP-T1-GE3 Real Image
Same model may have multiple batches, images only for reference.

SI7940DP-T1-GE3

Part No SI7940DP-T1-GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET 2N-CH 12V 7.6A PPAK SO-8
Datasheet
SI7940DP-T1-GE3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Obsolete(EOL)
FET Type 2 N-Channel (Dual)
FET Feature Logic Level Gate
Drain-Source Breakdown Voltage 12V
Continuous Drain Current at 25°C 7.6A
Maximum Rds On at Id,Vgs 17 mOhm @ 11.8A, 4.5V
Gate-Source Threshold Voltage 1.5V @ 250μA
Max Gate Charge 17nC @ 4.5V
Maximum Power Dissipation 1.4W
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package PowerPAK SO-8 Dual
Win Source Part Number 133395-SI7940DP-T1-GE3
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian SI7940DP-T1-GE3 CAD Model

Description

The Vishay 133395-SI7940DP-T1-GE3 is a 2 N-Channel (Dual) FET with a Logic Level Gate feature.

  • Application: Discrete Semiconductor Products
  • Package: PowerPAK SO-8 Dual
  • Mounting: Surface mount device (SMD) (SMT)
  • Maximum Power Dissipation: 1.4W
  • Drain-Source Breakdown Voltage: 12V
  • Continuous Drain Current @ 25°C: 7.6A
  • Gate-Source Threshold Voltage: 1.5V @ 250μA
  • Max Gate Charge @ 4.5V: 17nC
  • Maximum Rds On @ 11.8A, 4.5V: 17 mOhm
  • Temperature Range: -55°C to 150°C (TJ)
  • Supply and Demand Status: Limited

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