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Same model may have multiple batches, images only for reference.
SI7946DP-T1-E3 Real Image
Same model may have multiple batches, images only for reference.

SI7946DP-T1-E3

Part No SI7946DP-T1-E3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET 2N-CH 150V 2.1A PPAK SO-8
Datasheet
SI7946DP-T1-E3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Obsolete(EOL)
FET Type 2 N-Channel (Dual)
FET Feature Logic Level Gate
Drain-Source Breakdown Voltage 150V
Continuous Drain Current at 25°C 2.1A
Maximum Rds On at Id,Vgs 150 mOhm @ 3.3A, 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 20nC @ 10V
Maximum Power Dissipation 1.4W
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package PowerPAK SO-8 Dual
Win Source Part Number 113847-SI7946DP-T1-E3
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian SI7946DP-T1-E3 CAD Model

Description

The Vishay SI7946DP-T1-E3 is a 2 N-Channel (Dual) FET transistor with logic level gate feature.

  • Packaging: Reel - TR
  • Mounting: SMD (SMT)
  • Maximum Power Dissipation: 1.4W
  • Drain-Source Breakdown Voltage: 150V
  • Continuous Drain Current @ 25°C: 2.1A
  • Gate-Source Threshold Voltage: 4V @ 250μA
  • Maximum Gate Charge @ 10V: 20nC
  • Maximum Rds On @ 3.3A, 10V: 150 mOhm
  • Status: Obsolete (EOL)
  • Temperature Range: -55°C to 150°C (TJ)
  • Package: PowerPAK SO-8 Dual
  • Category: Discrete Semiconductor Products
  • Supply and Demand Status: Balance

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19+ $6.1877 $117.5663
29+ $5.9944 $173.8376
40+ $5.8010 $232.0400
52+ $5.6077 $291.6004
69+ $5.0275 $346.8975
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