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Same model may have multiple batches, images only for reference.
AOWF11S65 Real Image
Same model may have multiple batches, images only for reference.

AOWF11S65

Part No AOWF11S65
Manufacturer Alpha & Omega Semiconductor Inc.
Catalog Transistors - FETs, MOSFETs - RF
Description 650V 11A a MOS TM Power Transistor
Datasheet
AOWF11S65 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Alpha & Omega Semiconductor Inc.
Series aMOS
Packaging Tube
Channel Type Type N
Technology MOSFET
Drain Source Voltage 650V
Current - Continuous Drain (Id) @ 25°C 11A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Vgs(th) (Maximum) @ Id 4V @ 250μA
Gate Charge (Qg) (Maximum) @ Vgs 13.2nC @ 10V
Input Capacitance (Ciss) (Maximum) @ Vds 646pF @ 100V
Vgs (Maximum) ±30V
Power Dissipation (Maximum) 28W (Tc)
Rds On (Maximum) @ Id, Vgs 399 mOhm @ 5.5A, 10V
Operating Temperature Range -55°C ~ 150°C (TJ)
Mounting Style Through Hole
Package TO-262-3 Long Leads, I2Pak, TO-262AA
Win Source Part Number 1145079-AOWF11S65
Manufacturer Homepage www.aosmd.com
Popularity Medium
Supply and Demand Status Limited
Introduction Date January 10, 2012
ECCN EAR99
Country of Origin China
Halogen Free Compliant
Estimated EOL Date 2019
Ultra Librarian 3D Model Ultra Librarian AOWF11S65 CAD Model

Description

The AOWF11S65 from Alpha & Omega Semiconductor Inc. is a high-performance MOSFET transistor that is part of the aMOS series.

  • Series: aMOS
  • Drain-Source Voltage: 650V
  • Continuous Drain Current: 11A
  • Maximum Gate-Source Voltage: ±30V
  • Gate-Source Voltage Threshold: 4V @ 250μA
  • Maximum Gate Charge: 13.2nC @ 10V
  • Maximum Input Capacitance: 646pF @ 100V
  • Maximum Rds On: 399 mOhm @ 5.5A, 10V
  • Power Dissipation: 28W
  • Package: TO-262-3 Long Leads, I2Pak, TO-262AA

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