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SIA426DJ-T1-GE3 Vishay SIA426DJ-T1-GE3 real image SIA426DJ-T1-GE3 real image 2 SIA426DJ-T1-GE3 label picture
Same model may have multiple batches, images only for reference.
SIA426DJ-T1-GE3 Vishay SIA426DJ-T1-GE3 real image SIA426DJ-T1-GE3 real image 2 SIA426DJ-T1-GE3 label picture
SIA426DJ-T1-GE3 Vishay SIA426DJ-T1-GE3 real image SIA426DJ-T1-GE3 real image 2 SIA426DJ-T1-GE3 label picture
Same model may have multiple batches, images only for reference.

SIA426DJ-T1-GE3

Part No SIA426DJ-T1-GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 20V 4.5A SC70-6
Datasheet
SIA426DJ-T1-GE3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 20V
Continuous Drain Current at 25°C 4.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 2.5V, 10V
Gate-Source Threshold Voltage 1.5V @ 250μA
Max Gate Charge 27nC @ 10V
Max Input Capacitance 1020pF @ 10V
Maximum Gate-Source Voltage ±12V
Power Dissipation (Max) 3.5W (Ta), 19W (Tc)
Maximum Rds On at Id,Vgs 23.6 mOhm @ 9.9A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package PowerPAK SC-70-6 Single
Dimension PowerPAK SC-70-6
Win Source Part Number 028721-SIA426DJ-T1-GE3
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Limited
Family Name SiA426DJ
Introduction Date July 29, 2008
ECCN EAR99
Estimated EOL Date Obsolete
Ultra Librarian 3D Model Ultra Librarian SIA426DJ-T1-GE3 CAD Model

Description

The 028721-SIA426DJ-T1-GE3 is an active N-channel MOSFET electronic component manufactured by Vishay.

  • Power Dissipation: 3.5W (Ta), 19W (Tc)
  • Drive Voltage: 2.5V, 10V
  • Mounting Technology: SMD (SMT)
  • Drain-Source Breakdown Voltage: 20V
  • Maximum Gate-Source Voltage: ±12V
  • Maximum Rds On at Id,Vgs: 23.6 mOhm @ 9.9A, 10V

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