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SIA906EDJ-T1-GE3 Real Image SIA906EDJ-T1-GE3 Real Image
Same model may have multiple batches, images only for reference.
SIA906EDJ-T1-GE3 Real Image SIA906EDJ-T1-GE3 Real Image
SIA906EDJ-T1-GE3 Real Image SIA906EDJ-T1-GE3 Real Image
Same model may have multiple batches, images only for reference.

SIA906EDJ-T1-GE3

Part No SIA906EDJ-T1-GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET 2N-CH 20V 4.5A SC70-6
Datasheet
SIA906EDJ-T1-GE3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Active
FET Type 2 N-Channel (Dual)
FET Feature Logic Level Gate
Drain-Source Breakdown Voltage 20V
Continuous Drain Current at 25°C 4.5A
Maximum Rds On at Id,Vgs 46 mOhm @ 3.9A, 4.5V
Gate-Source Threshold Voltage 1.4V @ 250μA
Max Gate Charge 12nC @ 10V
Max Input Capacitance 350pF @ 10V
Maximum Power Dissipation 7.8W
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package PowerPAK SC-70-6 Dual
Win Source Part Number 028731-SIA906EDJ-T1-GE3
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian SIA906EDJ-T1-GE3 CAD Model

Description

The SIA906EDJ-T1-GE3 is a dual N-Channel logic level gate FET from Vishay.

  • Maximum Power Dissipation: 7.8W
  • Drain-Source Breakdown Voltage: 20V
  • Package: PowerPAK SC-70-6 dual package

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Pricing & Ordering

Quantity Unit Price Ext. Price
115+ $0.4402 $50.6230
280+ $0.3612 $101.1360
430+ $0.3499 $150.4570
595+ $0.3386 $201.4670
765+ $0.3274 $250.4610
1,025+ $0.2935 $300.8375
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 19,487 pieces
MOQ: 115 pcs
Order Increment : 1 pcs
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