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SI7884BDP-T1-GE3 Real Image SI7884BDP-T1-GE3 real image5503
Same model may have multiple batches, images only for reference.
SI7884BDP-T1-GE3 Real Image SI7884BDP-T1-GE3 real image5503
SI7884BDP-T1-GE3 Real Image SI7884BDP-T1-GE3 real image5503
Same model may have multiple batches, images only for reference.

SI7884BDP-T1-GE3

Part No SI7884BDP-T1-GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description Trans MOSFET N-CH 40V 58A 8-Pin PowerPAK SO T/R / MOSFET N-CH 40V 58A PPAK SO-8
Datasheet
SI7884BDP-T1-GE3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 40V
Continuous Drain Current at 25°C 58A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 3V @ 250μA
Max Gate Charge 77nC @ 10V
Max Input Capacitance 3540pF @ 20V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 4.6W (Ta), 46W (Tc)
Maximum Rds On at Id,Vgs 7.5 mOhm @ 16A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package PowerPAK SO-8
Dimension PowerPAK SO-8
Win Source Part Number 028682-SI7884BDP-T1-GE3
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Limited
Application Field Used in Power Management
Family Name Si7884BDP
Introduction Date April 17, 2008
ECCN EAR99
Halogen Free Compliant
Estimated EOL Date 2022
Ultra Librarian 3D Model Ultra Librarian SI7884BDP-T1-GE3 CAD Model

Description

The Vishay Si7884BDP is a MOSFET technology-based N-channel polarity product, used for power management.

  • Case/Package: PowerPAK SO-8
  • Maximum Gate-Source Voltage: ±20V
  • Maximum Rds On @ Id, Vgs: 7.5 mOhm @ 16A, 10V
  • Maximum Gate Charge: 77nC @ 10V
  • Introduction Date: April 17, 2008
  • Estimated EOL Date: 2022

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135+ $0.7481 $100.9935
210+ $0.7247 $152.1870
290+ $0.7014 $203.4060
370+ $0.6780 $250.8600
495+ $0.6078 $300.8610
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