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SIA456DJ-T1-GE3

Part No SIA456DJ-T1-GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 200V 2.6A SC70-6
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 200V
Continuous Drain Current at 25°C 2.6A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4.5V
Gate-Source Threshold Voltage 1.4V @ 250μA
Max Gate Charge 14.5nC @ 10V
Max Input Capacitance 350pF @ 100V
Maximum Gate-Source Voltage ±16V
Power Dissipation (Max) 3.5W (Ta), 19W (Tc)
Maximum Rds On at Id,Vgs 1.38 Ohm @ 750mA, 4.5V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package PowerPAK SC-70-6 Single
Dimension PowerPAK SC-70-6
Win Source Part Number 028729-SIA456DJ-T1-GE3
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Sufficient
Application Field Used in Industrial, Power Management, Portable Devices
Family Name SiA456DJ
Introduction Date September 01, 2008
ECCN EAR99
Country of Origin Malaysia
Halogen Free Compliant
Estimated EOL Date 2024
Ultra Librarian 3D Model Ultra Librarian SIA456DJ-T1-GE3 CAD Model

Description

The SiA456DJ-T1-GE3 MOSFET from Vishay is a N-channel device that is designed for use in industrial, power management, and portable devices.

  • Drain-Source Breakdown Voltage: 200V
  • Continuous Drain Current: 2.6A @ 25°C
  • Gate-Source Threshold Voltage: 1.4V @ 250μA
  • Maximum Gate Charge: 14.5nC @ 10V
  • Maximum Input Capacitance: 350pF @ 100V
  • Maximum Rds On: 1.38 Ohm @ 750mA, 4.5V
  • Package: PowerPAK SC-70-6 Single
  • Temperature Range: -55°C to 150°C

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Pricing & Ordering

Quantity Unit Price Ext. Price
55+ $0.9198 $50.5890
135+ $0.7547 $101.8845
210+ $0.7312 $153.5520
285+ $0.7076 $201.6660
370+ $0.6840 $253.0800
490+ $0.6132 $300.4680
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 53,580 pieces
MOQ: 55 pcs
Order Increment : 1 pcs
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