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Same model may have multiple batches, images only for reference.
SIA811DJ-T1-GE3 Real Image
Same model may have multiple batches, images only for reference.

SIA811DJ-T1-GE3

Part No SIA811DJ-T1-GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 20V 4.5A SC70-6
Datasheet
SIA811DJ-T1-GE3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Obsolete(EOL)
Polarity P-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 20V
Continuous Drain Current at 25°C 4.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4.5V
Gate-Source Threshold Voltage 1V @ 250μA
Max Gate Charge 13nC @ 8V
Max Input Capacitance 355pF @ 10V
Maximum Gate-Source Voltage ±8V
FET Feature Schottky Diode (Isolated)
Power Dissipation (Max) 1.9W (Ta), 6.5W (Tc)
Maximum Rds On at Id,Vgs 94 mOhm @ 2.8A, 4.5V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package PowerPAK SC-70-6 Dual
Dimension PowerPAK SC-70-6 Dual
Win Source Part Number 064629-SIA811DJ-T1-GE3
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian SIA811DJ-T1-GE3 CAD Model

Description

The electronic component with Id 330531 is a product manufactured by Vishay. The Win Source Part Number for this product is 064629-SIA811DJ-T1-GE3.

  • Polarity: P-Channel
  • Maximum Power Dissipation: 1.9W (Ta), 6.5W (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V

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Pricing & Ordering

Quantity Unit Price Ext. Price
125+ $0.4798 $59.9750
295+ $0.3938 $116.1710
455+ $0.3814 $173.5370
630+ $0.3691 $232.5330
810+ $0.3568 $289.0080
1,085+ $0.3199 $347.0915
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