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F7NM50N

Part No F7NM50N
Manufacturer STMicroelectronics
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 500V 5A TO-220FP
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer STMicroelectronics
Packaging Tube/Rail
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 500V
Continuous Drain Current at 25°C 5A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 12nC @ 10V
Max Input Capacitance 400pF @ 50V
Maximum Gate-Source Voltage ±25V
Power Dissipation (Max) 20W (Tc)
Maximum Rds On at Id,Vgs 780 mOhm @ 2.5A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package TO-220FP
Dimension TO-220-3 Full Pack
Win Source Part Number 204024-F7NM50N
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian F7NM50N CAD Model

Description

STMicroelectronics F7NM50N N-Channel MOSFET Overview

The F7NM50N is a high-performance N-Channel MOSFET brought to you by STMicroelectronics, designed to deliver efficiency and reliability for a wide range of applications. This power MOSFET is a part of ST's MDmesh™ V series, which is renowned for its excellent on-state resistance (R<sub>DS(on)) and superior switching performance, making it an ideal choice for high-efficiency solutions.

Key Features

  • Low Threshold Voltage: The device features a low threshold voltage, ensuring that it can be driven at lower gate voltages, which helps in reducing power consumption and improving overall system efficiency.
  • High Current Capability: With a continuous drain current (I<sub>D) rating of up to 6.5A, the F7NM50N can handle significant power, suitable for robust applications.
  • Low On-Resistance: The MOSFET boasts a low R<sub>DS(on) value, which minimizes conduction losses and enhances performance, particularly in applications where high efficiency is crucial.
  • High Switching Speed: The fast switching speed of the F7NM50N makes it an excellent candidate for high-frequency power switching applications, contributing to reduced switching losses.
  • 100% Avalanche Tested: This ensures that the MOSFET can withstand high energy pulses, providing reliability and robustness in adverse conditions.

Applications

The versatility of the F7NM50N allows it to be used in a variety of applications, including:

  • Switch Mode Power Supplies (SMPS)
  • LED Lighting
  • DC-DC Converters
  • Motor Control Circuits
  • Power Management Systems

Technical Specifications

The F7NM50N operates with a drain-source voltage (V<sub>DS) of up to 500V, which is suitable for high-voltage applications. The device is housed in a TO-220FP package, which is widely used and easy to mount on various types of PCBs.

Conclusion

In conclusion, the F7NM50N from STMicroelectronics is a robust and efficient N-Channel MOSFET that offers excellent performance characteristics for power conversion and management. Its low on-resistance, high current handling, and fast switching capabilities make it an ideal choice for designers looking to optimize their power systems for both performance and reliability.

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