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STE40NK90ZD

Part No STE40NK90ZD
Manufacturer STMicroelectronics
Catalog Transistors - FETs, MOSFETs - RF
Datasheet
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr STMicroelectronics
Series SuperFREDmesh™
Package Tube
Product Status Obsolete
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 900 V
Current - Continuous Drain (Id) @ 25°C 40A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 180mOhm @ 20A, 10V
Vgs(th) (Max) @ Id 4.5V @ 150µA
Gate Charge (Qg) (Max) @ Vgs 826 nC @ 10 V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 25000 pF @ 25 V
Power Dissipation (Max) 600W (Tc)
Temperature Range - Operating -65°C ~ 150°C (TJ)
Mounting Type Chassis Mount
Supplier Device Package ISOTOP®
Package / Case ISOTOP
Base Product Number STE40
Other Names 497-4337-5R,497-4337-5,-497-4337-5
Standard Package 10
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 1277983-STE40NK90ZD
Ultra Librarian 3D Model Ultra Librarian STE40NK90ZD CAD Model

Description

Introducing the STE40NK90ZD Power MOSFET from STMicroelectronics

The STE40NK90ZD is a state-of-the-art N-channel Power MOSFET designed and manufactured by the renowned semiconductor company, STMicroelectronics. This high-performance component is engineered to deliver exceptional efficiency and reliability for a wide range of applications, including switch-mode power supplies, motor control, and high-power converters.

Constructed using STMicroelectronics' advanced MDmesh™ technology, the STE40NK90ZD boasts a very low on-resistance (R<sub>DS(on)) combined with a high breakdown voltage, making it an excellent choice for applications requiring high efficiency and power density. The device is capable of handling continuous drain currents up to 40A, and it features a maximum drain-source voltage (V<sub>DSS) of 900V, which allows it to operate effectively in high voltage environments.

The STE40NK90ZD is also characterized by its fast switching performance, which is a critical attribute for reducing energy losses during the switching process. This is further enhanced by its low gate charge (Q<sub>g), which simplifies the drive circuit and contributes to the overall system efficiency.

With its robust design, the STE40NK90ZD ensures a high level of ruggedness and reliability. It can withstand harsh operating conditions and is resistant to the effects of hard switching, which is often encountered in industrial applications. The MOSFET also features an integrated body diode, which provides fast recovery and reduced reverse recovery time, further enhancing its performance in high-speed switching applications.

The package of the STE40NK90ZD is TO-247, a widely used industry standard that provides excellent thermal performance and is suitable for high-power circuits. This package allows for efficient heat dissipation, ensuring the MOSFET operates within its specified temperature range even under high load conditions.

In summary, the STE40NK90ZD from STMicroelectronics is a top-tier power MOSFET that offers outstanding electrical characteristics and thermal performance. Its robustness, efficiency, and reliability make it an ideal choice for designers looking to improve power management in their next-generation electronic systems.

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