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Same model may have multiple batches, images only for reference.
SQP120N10-3M8_GE3 Vishay
Same model may have multiple batches, images only for reference.

SQP120N10-3M8_GE3

Part No SQP120N10-3M8_GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 100V 120A TO220AB  /  N-Channel 100 V 120A (Tc) 250W (Tc) Through Hole TO-220AB
Datasheet
SQP120N10-3M8_GE3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr Vishay Siliconix
Package Tube
Product Status Last Time Buy
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V
Current - Continuous Drain (Id) @ 25°C 120A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 3.8mOhm @ 20A, 10V
Vgs(th) (Max) @ Id 3.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 190 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 7230 pF @ 25 V
Power Dissipation (Max) 250W (Tc)
Temperature Range - Operating -55°C ~ 175°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-220AB
Package / Case TO-220-3
Base Product Number SQP120
MSL Level 1 (Unlimited)
ECCN EAR99
HTSUS 8541.29.0095
Standard Package 500
Win Source Part Number 1134210-SQP120N10-3M8_GE3
Ultra Librarian 3D Model Ultra Librarian SQP120N10-3M8_GE3 CAD Model

Description

The Vishay Siliconix SQP120N10-3M8_GE3 is an N-channel MOSFET transistor with a drain to source voltage of 100V and a continuous drain current of 120A at 25°C.

  • Drain to Source Voltage: 100V
  • Continuous Drain Current: 120A @ 25°C
  • Rds On: 3.8mOhm @ 20A and 10V
  • Gate Charge: 190nC @ 10V
  • Mounting Type: Through-hole
  • Case/Package: TO-220-3
  • Supplier Device Package: TO-220AB
  • Input Capacitance: 7230pF @ 25V
  • Power Dissipation: 250W @ Tc
  • EAR99: Yes
  • MSL Level: 1 (unlimited)
  • HTSUS: 8541.29.0095
  • Alternative Part Number: SQP120N10-3M8-GE3

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