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IPP051N15N5AKSA1

Part No IPP051N15N5AKSA1
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 150V 120A TO220-3
Datasheet
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr Infineon Technologies
Series OptiMOS™ 5
Package Tube
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 150 V
Current - Continuous Drain (Id) @ 25°C 120A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 8V, 10V
Rds On (Max) @ Id, Vgs 5.1mOhm @ 60A, 10V
Vgs(th) (Max) @ Id 4.6V @ 264µA
Gate Charge (Qg) (Max) @ Vgs 100 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 7800 pF @ 75 V
Power Dissipation (Max) 500mW (Tc)
Temperature Range - Operating -55°C ~ 175°C (TJ)
Mounting Type Through Hole
Supplier Device Package PG-TO220-3
Package / Case TO-220-3
Base Product Number IPP051
Standard Package 50 pcs
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.21.0095
Win Source Part Number 921325-IPP051N15N5AKSA1
Ultra Librarian 3D Model Ultra Librarian IPP051N15N5AKSA1 CAD Model

Description

The OptiMOS™ 5 MOSFET is a high-performance N-channel FET designed for discrete semiconductor applications.

  • Drain to Source Voltage (Vdss): 150V
  • Continuous Drain Current (Id): 120A @ 25°C
  • Rds On (Max): 5.1mOhm @ 60A and 10V
  • Gate Charge (Qg): 100nC @ 10V
  • Package: TO-220-3 package
  • Operating Temperature: -55°C to 175°C
  • Manufacturer: Infineon Technologies
  • Product Series: OptiMOS™ 5
  • Status: active product

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Pricing & Ordering

Quantity Unit Price Ext. Price
5+ $10.1865 $50.9325
12+ $8.3582 $100.2984
19+ $8.0970 $153.8430
26+ $7.8358 $203.7308
34+ $7.5746 $257.5364
45+ $6.7910 $305.5950
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 755 pieces
MOQ: 5 pcs
Order Increment : 1 pcs
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