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STF13N65M2

Part No STF13N65M2
Manufacturer STMicroelectronics
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 650V 10A TO220FP
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Estimated Pruduction Lead Time 37 Weeks
Features N-Channel 650 V 10A (Tc) 25W (Tc) Through Hole TO-220FP
Manufacturer STMicroelectronics
Series MDmesh™ M2
Package Tube
Operating Temperature Range 150°C (TJ)
Mounting Through Hole
Package TO-220-3 Full Pack
Case / Package TO-220FP
Family Name STF13
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Other Part Number 497-15532-5, -497-15532-5
Quantity per package 50
Popularity High
Supply and Demand Status Balance
Win Source Part Number 897948-STF13N65M2
Ultra Librarian 3D Model Ultra Librarian STF13N65M2 CAD Model

Description

Introducing the STF13N65M2 Power MOSFET from STMicroelectronics

The STF13N65M2 is a state-of-the-art power MOSFET designed and manufactured by STMicroelectronics, one of the leading companies in the semiconductor industry. This high-performance device is part of ST's MDmesh™ M2 series, which is renowned for its excellent energy efficiency and thermal performance. The STF13N65M2 is specifically engineered to address the demanding requirements of a wide range of power applications, including switch-mode power supplies, lighting, converters, and motor drives.

Key Features:

  • High Voltage Capability: The STF13N65M2 is capable of withstanding voltages up to 650V, making it suitable for high voltage applications that require reliable switching and power conversion.
  • Low On-Resistance: With an RDS(on) of only 0.29 Ω, this MOSFET provides reduced conduction losses, which translates to higher efficiency and lower heat generation in operation.
  • Fast Switching Speed: The device is designed for fast switching, minimizing transition losses and improving overall performance in high-frequency circuits.
  • Reduced Gate Charge: A low gate charge (Qg) ensures minimal driving power is required, which is critical for energy-saving in power management applications.
  • 100% Avalanche Tested: Guaranteeing robustness and reliability, each unit is tested for avalanche ruggedness, ensuring the MOSFET can handle tough conditions.

Advanced Technology:

The STF13N65M2 utilizes STMicroelectronics' second generation of MDmesh™ technology. This innovative approach combines a vertical structure with a proprietary strip layout to achieve an optimal balance of on-resistance, gate charge, and switching characteristics. The result is a product that not only excels in performance but also in energy conservation, making it an environmentally friendly choice for modern electronic designs.

Package Information:

The STF13N65M2 comes in a TO-220FP package, which is a widely used format that provides a good balance between thermal performance and compactness. This package ensures ease of integration into various circuit designs, while also allowing for efficient heat dissipation to maintain stability under load.

With its combination of high voltage capability, low on-resistance, and fast switching speeds, the STF13N65M2 from STMicroelectronics represents a reliable and efficient solution for designers looking to optimize their power management systems.

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Pricing & Ordering

Quantity Unit Price Ext. Price
55+ $0.9213 $50.6715
135+ $0.7560 $102.0600
205+ $0.7323 $150.1215
285+ $0.7087 $201.9795
365+ $0.6851 $250.0615
490+ $0.6142 $300.9580
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 3,640 pieces
MOQ: 55 pcs
Order Increment : 1 pcs
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