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STF2N80K5

Part No STF2N80K5
Manufacturer STMicroelectronics
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 800V 2A TO220FP
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer STMicroelectronics
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 800V
Continuous Drain Current at 25°C 2A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 5V @ 100μA
Max Gate Charge 3nC @ 10V
Max Input Capacitance 95pF @ 100V
Maximum Gate-Source Voltage 30V
Power Dissipation (Max) 20W (Tc)
Maximum Rds On at Id,Vgs 4.5 Ohm @ 1A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package TO-220FP
Dimension TO-220-3 Full Pack
Win Source Part Number 1102956-STF2N80K5
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian STF2N80K5 CAD Model

Description

STF2N80K5 - N-channel 800 V, 1.9 Ohm typ., 2 A SuperMESH™5 Power MOSFET in a TO-220FP package

The STF2N80K5 is a state-of-the-art N-channel Power MOSFET brought to you by STMicroelectronics, a global leader in semiconductor solutions. This device is a part of the SuperMESH™5 family, which is renowned for its exceptional efficiency and performance in high-voltage applications. The STF2N80K5 is designed to meet the rigorous demands of power electronics experts looking for a reliable and robust component capable of operating at high voltages.

Encased in a TO-220FP package, the STF2N80K5 offers an optimal balance between a compact form factor and thermal performance, making it suitable for a wide range of applications, including switched-mode power supplies, LED lighting solutions, and high-efficiency converters. With an impressive breakdown voltage of 800 V, this MOSFET can easily handle high voltage operations while providing a safety margin for stress conditions.

Featuring a low on-resistance of just 1.9 Ohms typical, the STF2N80K5 ensures minimal conduction losses, which translates to higher efficiency and lower operational temperatures. This low RDS(on) characteristic, combined with a current rating of 2 A, makes the STF2N80K5 an excellent choice for applications where power efficiency is crucial.

The SuperMESH™5 technology incorporated in this MOSFET includes innovations that reduce switching losses, further enhancing the component's efficiency and thermal performance. This is particularly beneficial in applications that require fast switching frequencies, such as modern power supply units and electronic ballasts.

Moreover, the STF2N80K5 boasts an improved dv/dt capability, ensuring reliability and longevity even under the harshest switching conditions. The device also features a 100% avalanche tested design, guaranteeing ruggedness and resilience against unexpected voltage spikes.

In summary, the STF2N80K5 from STMicroelectronics is a high-voltage, high-performance Power MOSFET that offers a perfect blend of efficiency, thermal management, and reliability. Its advanced features make it an ideal choice for designers looking to create energy-efficient, space-saving, and durable power electronic systems.

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Pricing & Ordering

Quantity Unit Price Ext. Price
75+ $0.8235 $61.7625
175+ $0.6768 $118.4400
265+ $0.6549 $173.5485
365+ $0.6341 $231.4465
475+ $0.6133 $291.3175
635+ $0.5498 $349.1230
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 20,000 pieces
MOQ: 75 pcs
Order Increment : 1 pcs
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