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Categories Discrete Semiconductor Products
Manufacturer STMicroelectronics
Packaging Tube
Status Obsolete
Transistor Polarity N-Channel
Technology MOSFET
Vds - Drain-Source Breakdown Voltage 600V
Id - Continuous Drain Current 22A
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Maximum) at Id, Vgs 150mOhm at 11A, 10V
Gate Source Voltage(th) (Maximum) at Id 4V at 250μA
Gate Charge (Qg) (Maximum) at Vgs 36nC at 10V
Gate Source Voltage (Maximum) ±25V
Input Capacitance (Ciss) (Maximum) at Vds 1440pF at 100V
Power Dissipation (Maximum) 30W
Temperature Range - Operating 150°C
Mounting Style Through Hole
Supplier Device Package I2PAKFP (TO-281)
Manufacturer Package TO-262-3 Full Pack, I2Pak
Manufacturer Pack Quantity 50
MSL Level Not Applicable
Win Source Part Number 1260992-STFI28N60M2
Manufacturer Homepage www.st.com
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian STFI28N60M2 CAD Model

Description

STFI28N60M2 Power MOSFET by STMicroelectronics

The STFI28N60M2 is a state-of-the-art power MOSFET designed and manufactured by STMicroelectronics, a global semiconductor leader known for its innovative approach in electronics. This MOSFET is part of ST's MDmesh™ M2 series, which is specifically engineered to achieve extremely low on-resistance and superior switching performance, making it an ideal choice for high-efficiency applications.

With a maximum continuous drain current of 28 A and a drain-source voltage of 600 V, the STFI28N60M2 is built to handle significant power levels. The device's low gate charge and reduced capacitance contribute to its high-speed switching capabilities, which are essential for modern electronic applications requiring fast and efficient power management.

The STFI28N60M2 comes in an I2PAK package, which is known for its robustness and excellent thermal performance. This package is suitable for through-hole mounting, making it a versatile option for various PCB designs. Its high dv/dt and avalanche capabilities are indicative of the device's reliability and resilience under harsh operating conditions, ensuring a long operational life and stability.

One of the key features of the STFI28N60M2 is its very low on-state resistance (R<sub>DS(on)), which stands at just 0.165 ohms. This low resistance minimizes conduction losses and improves overall energy efficiency, which is critical for power-sensitive designs. Whether it's for power supply units, lighting applications, welding equipment, or any other system that requires efficient power conversion, this MOSFET is engineered to deliver top-notch performance.

STMicroelectronics has also integrated Zener protection into the STFI28N60M2, providing enhanced protection against electrostatic discharge (ESD) and ensuring the longevity and reliability of the device in the field. With its combination of high power density, efficiency, and protection features, the STFI28N60M2 is an excellent choice for designers looking to optimize their power management solutions.

Overall, the STFI28N60M2 epitomizes the commitment of STMicroelectronics to providing advanced semiconductor technologies that empower a wide range of high-performance and energy-efficient electronic systems.

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Pricing & Ordering

Quantity Unit Price Ext. Price
11+ $6.4149 $70.5639
25+ $5.2637 $131.5925
39+ $5.0991 $198.8649
53+ $4.9347 $261.5391
68+ $4.7702 $324.3736
91+ $4.2766 $389.1706
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
Availability: 6,700 pieces
MOQ: 11 pcs
Order Increment : 1 piece
*Need More Quantity? *Request a Bulk Quantity Quotation?

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