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Category Discrete Semiconductor Products>Transistors - IGBTs - Single
Mfr STMicroelectronics
Package Tape & Reel
IGBT Type Trench Field Stop
Voltage - Collector Emitter Breakdown (Max) 650 V
Current - Collector (Ic) (Max) 30 A
Current - Collector Pulsed (Icm) 60 A
Vce(on) (Max) @ Vge, Ic 2V @ 15V, 15A
Power - Max 136 W
Switching Energy 90µJ (on), 450µJ (off)
Input Type Standard
Gate Charge 45 nC
Td (on/off) @ 25°C 24ns/93ns
Test Condition 400V, 15A, 12Ohm, 15V
Reverse Recovery Time (trr) 142 ns
Temperature Range - Operating -55°C ~ 175°C (TJ)
Mounting SMD (SMT)
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package D2PAK (TO-263)
Base Product Number STGB15
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Other Names 497-16507-6,497-16507-2,497-16507-1
Standard Package 1,000
Win Source Part Number 1134973-STGB15M65DF2
Ultra Librarian 3D Model Ultra Librarian STGB15M65DF2 CAD Model

Description

STMicroelectronics STGB15M65DF2 IGBT

The STGB15M65DF2 is a state-of-the-art IGBT (Insulated Gate Bipolar Transistor) from STMicroelectronics, designed to offer a blend of high efficiency and fast switching performance for a wide range of power applications. This IGBT is a part of the ST's trench gate field-stop IGBTs, which are known for their low on-voltage drop and minimal switching losses.

With a collector-emitter voltage rating of 650V, the STGB15M65DF2 is well-suited for applications that require robust voltage endurance. It has a collector current rating of 15A at 25°C, making it capable of handling significant power levels. The device is optimized for high-frequency switching, which is essential for applications such as inverters, converters, and motor drives.

The STGB15M65DF2 incorporates an advanced field-stop trench technology that enhances its performance by reducing conduction and switching losses. This technology allows for improved thermal characteristics and a higher efficiency, which is crucial for energy-sensitive designs. The IGBT also features a co-packaged fast recovery diode, which provides additional protection against reverse recovery losses and ensures smooth operation under different conditions.

One of the key advantages of the STGB15M65DF2 is its robustness, with a maximum operating junction temperature of 175°C. This high-temperature capability ensures reliability and longevity even in demanding thermal environments. Furthermore, the device is designed with a low gate charge and low internal inductance, which contribute to its excellent switching performance.

The STGB15M65DF2 comes in a TO-263 (D2PAK) package, which is a surface-mount package that provides good thermal contact to the PCB and simplifies the assembly process. This package is widely used in the industry, making the STGB15M65DF2 a versatile choice for designers looking to incorporate a high-performance IGBT into their systems.

In summary, the STGB15M65DF2 from STMicroelectronics is a powerful and efficient IGBT that offers an optimal solution for designers seeking high voltage capability, fast switching, and energy efficiency in their power management and conversion applications.

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Quantity Unit Price Ext. Price
50+ $1.0032 $50.1600
125+ $0.8231 $102.8875
190+ $0.7974 $151.5060
260+ $0.7717 $200.6420
340+ $0.7460 $253.6400
450+ $0.6688 $300.9600
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Availability: 30,000 pieces
MOQ: 50 pcs
Order Increment : 1 piece
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