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STGP10NC60HD

Part No STGP10NC60HD
Manufacturer STMicroelectronics
Catalog IGBTs - Single
Description IGBT 600V 20A 65W TO220
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer STMicroelectronics
Packaging Tube/Rail
Status Active
VCEO Maximum Collector-Emitter Breakdown Voltage 600V
Maximum Current Collector 20A
Pulsed Collector Current 30A
Collector-emitter saturation voltage(Max) 2.5V @ 15V, 5A
Maximum Power Dissipation 65W
Total Switching Energy(Ets) 31.8μJ (on), 95μJ (off)
Input Type Standard
Gate Charge 19.2nC
Turn-on and Turn-off delay time 14.2ns/72ns
Testing Conditions 390V, 5A, 10 Ohm, 15V
Reverse Recovery Time (trr) 22ns
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package TO-220AB
Win Source Part Number 1103033-STGP10NC60HD
Popularity Medium
Supply and Demand Status Balance
Application Field Used in Industrial
Ultra Librarian 3D Model Ultra Librarian STGP10NC60HD CAD Model

Description

STGP10NC60HD - IGBT from STMicroelectronics

The STGP10NC60HD is a high-performance IGBT (Insulated Gate Bipolar Transistor) designed and manufactured by STMicroelectronics, a global semiconductor leader. This device is part of ST's PowerMESH™ IGBTs, which are intended for a wide range of high voltage and fast-switching applications.

This IGBT is optimized for minimal saturation voltage and high operating frequency, which translates into high efficiency and reliability. The STGP10NC60HD is well-suited for an array of power applications, including motor drives, uninterruptible power supplies (UPS), induction heating, and power factor correction circuits.

Key Features:

  • Voltage Rating: The device is rated for a collector-emitter voltage of 600V, which makes it suitable for high voltage applications.
  • Current Rating: It can handle a continuous collector current of up to 10A, ensuring robust performance for a range of electrical loads.
  • High-Speed Switching: The STGP10NC60HD boasts a fast switching speed, which is essential for reducing switching losses and improving overall efficiency in power converters.
  • Low Saturation Voltage: It features a very low on-state collector-emitter saturation voltage (VCE(sat)) to minimize conduction losses.
  • Co-Packaged Diode: The device includes a free-wheeling diode, which is co-packaged with the IGBT. This diode is fast and soft-recovery, which is ideal for reducing electromagnetic interference (EMI) and increasing reliability.
  • Temperature Performance: The IGBT is characterized by its exceptional performance over a wide temperature range, ensuring stability and functionality in various environmental conditions.

Applications:

  • Motor Drives
  • Uninterruptible Power Supplies (UPS)
  • Induction Heating
  • Power Factor Correction Circuits
  • High-Frequency Converters

With its advanced features and robust design, the STGP10NC60HD IGBT from STMicroelectronics represents a reliable choice for designers looking to optimize their power management systems while ensuring efficiency and thermal performance.

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Pricing & Ordering

Quantity Unit Price Ext. Price
12,200+ $0.0048 $58.5600
29,415+ $0.0039 $114.7185
45,455+ $0.0039 $177.2745
62,500+ $0.0037 $231.2500
80,650+ $0.0036 $290.3400
107,145+ $0.0032 $342.8640
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 24,400 pieces
MOQ: 12200 pcs
Order Increment : 1 pcs
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