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Same model may have multiple batches, images only for reference.
IXGH32N60CD1 Real Image
Same model may have multiple batches, images only for reference.

IXGH32N60CD1

Part No IXGH32N60CD1
Manufacturer IXYS
Catalog IGBTs - Single
Description IGBT 600V 60A 200W TO247AD
Datasheet
IXGH32N60CD1 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer IXYS
Packaging Bulk
Status Obsolete(EOL)
VCEO Maximum Collector-Emitter Breakdown Voltage 600V
Maximum Current Collector 60A
Pulsed Collector Current 120A
Collector-emitter saturation voltage(Max) 2.5V @ 15V, 32A
Maximum Power Dissipation 200W
Total Switching Energy(Ets) 320μJ (off)
Input Type Standard
Gate Charge 110nC
Turn-on and Turn-off delay time 25ns/85ns
Testing Conditions 480V, 32A, 4.7 Ohm, 15V
Reverse Recovery Time (trr) 25ns
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package TO-247AD (IXGH)
Win Source Part Number 1049613-IXGH32N60CD1
Popularity Medium
Supply and Demand Status Balance
Application Field Used in Motor Drive & Control, Power Management
Ultra Librarian 3D Model Ultra Librarian IXGH32N60CD1 CAD Model

Description

The IXYS IXGH32N60CD1 is an IGBT (Insulated Gate Bipolar Transistor) that is used in motor drive and control and power management applications.

  • Supply and Demand Status: Balanced
  • Collector-Emitter Breakdown Voltage (Max): 600V
  • Collector Current (Max): 60A
  • Total Switching Energy: 320μJ (off)
  • Reverse Recovery Time (trr): 25ns
  • Package: TO-247AD
  • Temperature Range: -55°C to 150°C (TJ)

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