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STGW30H65FB

Part No STGW30H65FB
Manufacturer STMicroelectronics
Catalog IGBTs - Single
Description IGBT 650V 30A 260W TO-247 / Trans IGBT Chip N-CH 650V 60A 260000mW 3-Pin(3+Tab) TO-247 Tube
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer STMicroelectronics
Packaging Tube
IGBT Type Trench Field Stop
Voltage - Collector Emitter Breakdown (Maximum) 650V
Current - Collector (Ic) (Maximum) 30A
Current - Collector Pulsed (Icm) 120A
Vce(on) (Maximum) @ Vge, Ic 2V @ 15V, 30A
Power - Max 260W
Switching Energy 151μJ (on), 293μJ (off)
Input Type Standard
Gate Charge 149nC
Td (on/off) @ 25°C 37ns/146ns
Test Condition 400V, 30A, 10 Ohm, 15V
Operating Temperature Range -55°C ~ 175°C (TJ)
Mounting Style Through Hole
Package TO-247-3
Manufacturer Package TO-247
Win Source Part Number 795618-STGW30H65FB
Popularity Medium
Supply and Demand Status Limited
Family Name STGW30H65FB
Introduction Date January 30, 2014
ECCN EAR99
Country of Origin China
Halogen Free Compliant
Estimated EOL Date 2029
Ultra Librarian 3D Model Ultra Librarian STGW30H65FB CAD Model

Description

The STGW30H65FB is a high-performance 650V Trench Gate Field-Stop IGBT (Insulated Gate Bipolar Transistor) developed by STMicroelectronics. Designed for efficiency and robustness, this IGBT is well-suited for a variety of power applications, particularly in AC-DC converters, motor drives, and power factor correction circuits.

Key Features

  • High Voltage Capability: With a collector-emitter voltage (V<sub>CE) rating of 650V, the STGW30H65FB is capable of handling high voltage applications which makes it ideal for industrial and consumer power systems.
  • Low On-State Voltage: This IGBT features a low V<sub>CE(sat) (collector-emitter saturation voltage), reducing conduction losses and improving overall efficiency during operation.
  • High Current Rating: The device can support a continuous collector current (I<sub>C) of 60A, allowing for high current handling capabilities.
  • Trench Gate Field-Stop Technology: The use of Trench Gate Field-Stop structure provides a good trade-off between switching speed and on-state voltage, optimizing performance in switching applications.
  • Co-Packaged Free Wheeling Diode: It comes with a co-packaged fast and soft recovery anti-parallel diode, which is beneficial for applications requiring efficient freewheeling operations.

Applications

  • AC-DC Power Supplies
  • Motor Drives
  • Power Factor Correction (PFC) Circuits
  • Uninterruptible Power Supplies (UPS)
  • Welding Equipment
  • Induction Heating

Benefits

The STGW30H65FB IGBT offers numerous benefits to designers. Its high efficiency and fast switching capabilities reduce energy losses and improve power density in compact designs. The robustness and reliability of this IGBT make it suitable for demanding applications where long-term operation is critical. Furthermore, its integrated diode simplifies circuit design and enhances overall system reliability.

Conclusion

With its advanced features and reliable performance, the STGW30H65FB from STMicroelectronics stands out as a top choice for engineers looking to improve the efficiency and reliability of their high-voltage power applications.

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Pricing & Ordering

Quantity Unit Price Ext. Price
22+ $2.6486 $58.2692
54+ $2.1732 $117.3528
83+ $2.1053 $174.7399
114+ $2.0374 $232.2636
147+ $1.9695 $289.5165
197+ $1.7658 $347.8626
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Availability: 4,200 pieces
MOQ: 22 pcs
Order Increment : 1 pcs
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