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Same model may have multiple batches, images only for reference.
IRGSL14C40LPBF Infineon Technologies
Same model may have multiple batches, images only for reference.

IRGSL14C40LPBF

Part No IRGSL14C40LPBF
Manufacturer Infineon Technologies
Catalog IGBTs - Single
Description IGBT 430V 20A 125W TO262AA / Trans IGBT Chip N-CH 370V 20A 125000mW 3-Pin(3+Tab) TO-262 Tube
Datasheet
IRGSL14C40LPBF Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube
Part Status Obsolete(EOL)
Voltage - Collector Emitter Breakdown (Maximum) 430V
Current - Collector (Ic) (Maximum) 20A
Vce(on) (Maximum) @ Vge, Ic 1.75V @ 5V, 14A
Power - Max 125W
Input Type Logic
Gate Charge 27nC
Td (on/off) @ 25°C 900ns/6μs
Operating Temperature Range -40°C ~ 175°C (TJ)
Mounting Style Through Hole
Package TO-262-3 Long Leads, I2Pak, TO-262AA
Manufacturer Package TO-262
Win Source Part Number 777095-IRGSL14C40LPBF
Popularity Medium
Supply and Demand Status Limited
Family Name IRGSL14C40L
Introduction Date November 19, 2004
ECCN EAR99
Country of Origin Mexico
Halogen Free Compliant
Estimated EOL Date Obsolete / End of life
Ultra Librarian 3D Model Ultra Librarian IRGSL14C40LPBF CAD Model

Description

The Infineon Technologies IRGSL14C40LPBF is a through-hole power MOSFET transistor with a package of TO-262-3 Long Leads, I2Pak, TO-262AA.

  • Maximum Power: 125W
  • Maximum Collector Current: 20A
  • Voltage Collector-Emitter Breakdown: 430V
  • Gate Charge: 27nC
  • Temperature Range: -40°C to 175°C
  • Halogen-Free: Yes

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