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Same model may have multiple batches, images only for reference.
IRF7524D1GTRPBF
Same model may have multiple batches, images only for reference.

IRF7524D1GTRPBF

Part No IRF7524D1GTRPBF
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 20V 1.7A MICRO8
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Obsolete(EOL)
Polarity P-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 20V
Continuous Drain Current at 25°C 1.7A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 2.7V, 4.5V
Gate-Source Threshold Voltage 700mV @ 250μA
Max Gate Charge 8.2nC @ 4.5V
Max Input Capacitance 240pF @ 15V
Maximum Gate-Source Voltage ±12V
FET Feature Schottky Diode (Isolated)
Power Dissipation (Max) 1.25W (Ta)
Maximum Rds On at Id,Vgs 270 mOhm @ 1.2A, 4.5V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 8-uSMD
Dimension 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Win Source Part Number 001898-IRF7524D1GTRPBF
Popularity Medium
Supply and Demand Status Balance
Quantity per package 4k pcs
Ultra Librarian 3D Model Ultra Librarian IRF7524D1GTRPBF CAD Model

Description

The IRF7524D1GTRPBF is a P-channel MOSFET transistor IC manufactured by Infineon Technologies.

  • Feature: Schottky diode isolated transistor
  • Applications: Power management, DC-DC converters, and battery chargers
  • Status: Obsolete (EOL)
  • Package: 8-uSMD
  • Dimension: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
  • Maximum Power Dissipation: 1.25W (Ta)
  • Continuous Drain Current: 1.7A (Ta)

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Pricing & Ordering

Quantity Unit Price Ext. Price
6+ $10.7669 $64.6014
14+ $8.8346 $123.6844
21+ $8.5586 $179.7306
28+ $8.2825 $231.9100
37+ $8.0065 $296.2405
49+ $7.1783 $351.7367
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Availability: 10,000 pieces
MOQ: 6 pcs
Order Increment : 1 pcs
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