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FGHL50T65SQDT

Part No FGHL50T65SQDT
Manufacturer ON Semiconductor
Catalog IGBTs - Single
Description IGBT, 650 V, 50 A FIELD STOP TRE / IGBT Trench Field Stop 650 V 100 A 268 W Through Hole TO-247-3
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Category Discrete Semiconductor Products>Transistors - IGBTs - Single
Manufacturer onsemi
Packaging Tube
IGBT Type Trench Field Stop
Voltage - Collector Emitter Breakdown (Max) 650 V
Current - Collector (Ic) (Max) 100 A
Current - Collector Pulsed (Icm) 200 A
Vce(on) (Max) @ Vge, Ic 2.1V @ 15V, 50A
Power - Max 268 W
Switching Energy 223µJ (on), 91.13µJ (off)
Input Type Standard
Gate Charge 99.7 nC
Td (on/off) @ 25°C 22.8ns/70ns
Test Condition 400V, 12.5A, 4.7Ohm, 15V
Temperature Range - Operating -55°C ~ 175°C (TJ)
Mounting Through Hole
Case / Package TO-247-3
Supplier Device Package TO-247-3
Base Product Number FGHL50
RoHS Status ROHS3 Compliant
MSL Level Not Applicable
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Other Part Number 488-FGHL50T65SQDT
Standard Package 30
Win Source Part Number 1324945-FGHL50T65SQDT
Ultra Librarian 3D Model Ultra Librarian FGHL50T65SQDT CAD Model

Description

ON Semiconductor FGHL50T65SQDT: A Robust IGBT for High-Efficiency Applications

The FGHL50T65SQDT is a cutting-edge insulated gate bipolar transistor (IGBT) designed by ON Semiconductor, a company renowned for its innovative power and signal management solutions. This IGBT is part of the high-performance Field Stop II technology line, tailored for applications demanding high efficiency and fast switching. With its advanced features, the FGHL50T65SQDT is an ideal choice for a wide range of power electronics applications, including inverters, converters, and motor drives.

Key Features and Benefits

  • High Current Capability: The FGHL50T65SQDT is capable of handling a continuous collector current of 50A, making it suitable for high-power applications.
  • Low On-State Voltage: The device boasts a low V<sub>CE(sat) of typically 1.65V at I<sub>C=50A, which contributes to reduced conduction losses and improves overall efficiency.
  • Fast Switching Speed: With a typical turn-off delay time of 47ns and a fall time of 48ns, this IGBT ensures swift switching, thereby minimizing switching losses and enabling high-frequency operation.
  • High Temperature Operation: The FGHL50T65SQDT can operate at junction temperatures up to 175°C, offering reliable performance even under thermal stress.
  • Robust Design: The device features a maximum clamping capability of 650V, providing a margin of safety for applications that may experience voltage spikes.
  • Co-Packaged Diode: This IGBT comes with a co-packaged soft recovery anti-parallel diode, which enhances performance during the reverse recovery phase and reduces electromagnetic interference (EMI).

Applications

The FGHL50T65SQDT is versatile and can be used in a variety of high-efficiency applications, including:

  • Solar inverters
  • Uninterruptible power supplies (UPS)
  • Induction heating systems
  • Electric vehicle (EV) chargers
  • High-frequency welding equipment

ON Semiconductor's commitment to quality and innovation is evident in the FGHL50T65SQDT IGBT. Its robustness and high-performance characteristics make it an excellent choice for designers looking to enhance efficiency and reliability in their power management systems. With its superior switching performance and thermal capabilities, the FGHL50T65SQDT stands out as a key component in the next generation of energy-efficient electronic designs.

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Pricing & Ordering

Quantity Unit Price Ext. Price
10+ $5.5485 $55.4850
22+ $4.5526 $100.1572
35+ $4.4104 $154.3640
47+ $4.2681 $200.6007
61+ $4.1258 $251.6738
82+ $3.6990 $303.3180
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Availability: 450 pieces
MOQ: 10 pcs
Order Increment : 1 pcs
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