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STGW60H65DF

Part No STGW60H65DF
Manufacturer STMicroelectronics
Catalog IGBTs - Single
Description 60 A, 650 V field stop trench gate IGBT with very fast diode
Datasheet
Sample
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Categories Discrete Semiconductor Products
Manufacturer STMicroelectronics
Packaging Tube
IGBT Type Trench Field Stop
Voltage - Collector Emitter Breakdown (Maximum) 650V
Current - Collector (Ic) (Maximum) 120A
Current - Collector Pulsed (Icm) 240A
Vce(on) (Maximum) @ Vge, Ic 1.9V @ 15V, 60A
Power - Max 360W
Switching Energy 1.5mJ (on), 1.1mJ (off)
Input Type Standard
Gate Charge 206nC
Td (on/off) @ 25°C 67ns/165ns
Test Condition 400V, 60A, 10 Ohm, 15V
Reverse Recovery Time (trr) 62ns
Operating Temperature Range -55°C ~ 150°C (TJ)
Mounting Style Through Hole
Package TO-247-3
Manufacturer Package TO-247
Win Source Part Number 1261054-STGW60H65DF
Manufacturer Homepage www.st.com
Popularity Medium
Supply and Demand Status Limited
Family Name STGW60H65DF
Introduction Date March 28, 2012
ECCN EAR99
Country of Origin China
Halogen Free Compliant
Estimated EOL Date 2025
Ultra Librarian 3D Model Ultra Librarian STGW60H65DF CAD Model

Description

STGW60H65DF - High Performance IGBT by STMicroelectronics

The STGW60H65DF is a state-of-the-art IGBT (Insulated Gate Bipolar Transistor) from STMicroelectronics, designed to offer a blend of high efficiency and fast switching performance for a wide range of power applications. This IGBT is part of STMicroelectronics' advanced power semiconductor lineup, which is known for its robustness, reliability, and energy-saving capabilities.

Key Features

  • Voltage Rating: The device is rated for a maximum collector-emitter voltage of 650V, making it suitable for high-voltage applications.
  • Current Capability: It can handle continuous collector current up to 60A at 25°C, which is ideal for handling high power loads.
  • Low On-Resistance: The STGW60H65DF boasts a low on-state voltage drop due to its optimized saturation voltage, reducing conduction losses and improving overall efficiency.
  • High-Speed Switching: With a fast switching speed, this IGBT is capable of operating at high frequencies, which is beneficial for applications like switching power supplies and motor controls.
  • Short-Circuit Rating: It offers a short-circuit withstand time of 10μs, providing robust performance under fault conditions.
  • Co-Packaged Diode: The device includes a co-packaged fast recovery anti-parallel diode, which enhances performance during the reverse recovery phase.

Applications

The STGW60H65DF is ideal for a variety of applications due to its high efficiency and fast switching characteristics. Typical applications include:

  • Uninterruptible Power Supplies (UPS)
  • Solar Inverters
  • Welding Equipment
  • Induction Heating Systems
  • High-Frequency Converters
  • Motor Drives

Advanced Technology

STMicroelectronics has integrated its cutting-edge trench gate field-stop technology into the STGW60H65DF, which minimizes on-state voltage and improves switching performance. This technology, combined with an optimized device structure, ensures high robustness and reliability, making this IGBT an excellent choice for designers looking to optimize their power management solutions.

For detailed specifications, application notes, and additional resources, engineers and designers are encouraged to consult the official datasheet and technical documentation provided by STMicroelectronics.

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