STL13N65M2

Part No STL13N65M2
Manufacturer STMicroelectronics
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 650V 6.5A POWERFLAT
Datasheet
Sample
Rohs State rohs
ECAD Module
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Popularity Medium
Win Source Part Number 1103182-STL13N65M2
Dimension 8-PowerVDFN
Case / Package PowerFlat (5x6)
Mounting SMD (SMT)
Temperature Range - Operating -55°C to 150°C (TJ)
Maximum Rds On at Id,Vgs 475 mOhm @ 3A, 10V
Power Dissipation (Max) 52W (Tc)
Maximum Gate-Source Voltage ±25V
Max Input Capacitance 590pF @ 100V
Max Gate Charge 17nC @ 10V
Gate-Source Threshold Voltage 4V @ 250μA
Drive Voltage (Max Rds On, Min Rds On) 10V
Continuous Drain Current at 25°C 6.5A (Tc)
Drain-Source Breakdown Voltage 650V
Technology MOSFET
Polarity N-Channel
Status Active
Packaging Reel - TR
Manufacturer STMicroelectronics
Categories Discrete Semiconductor Products

Description

The STL13N65M2 is a state-of-the-art power MOSFET designed and manufactured by STMicroelectronics, a global semiconductor leader. This device is part of their MDmesh™ M2 series, which is renowned for its excellent energy efficiency and performance in high voltage applications. The STL13N65M2 is specifically engineered to address the stringent demands of today's power supply market, including those found in switched-mode power supplies, LED lighting, welding, and other high-performance applications.

Key Features

  • Voltage Rating: The STL13N65M2 boasts a high drain-source voltage (VDS) of 650V, which makes it suitable for a wide range of high voltage applications.
  • Low On-Resistance: With an on-resistance (RDS(on)) as low as 0.29 Ω, this MOSFET ensures minimal conduction losses, thereby enhancing the overall efficiency of the application it is used in.
  • High Current Capacity: It can handle continuous drain currents (ID) up to 11 A, making it capable of driving high current loads with ease.
  • Fast Switching Speed: The device's fast switching characteristics are ideal for applications requiring high switching frequencies, thereby reducing switching losses and improving performance.
  • Improved Ruggedness: Its enhanced ruggedness is attributable to STMicroelectronics' proprietary MDmesh technology, which also contributes to the device's high dv/dt capability.
  • Reduced Gate Charge: The STL13N65M2 has a low gate charge (Qg), which reduces the power required to drive the MOSFET, thereby conserving energy in the driving circuit.

Applications

The STL13N65M2 is versatile and can be used in a variety of applications. It is especially well-suited for high efficiency converters and freewheeling diodes in a variety of power supply schemes. Its robustness and reliability make it an excellent choice for hard switching environments such as motor control, inverters, and other power conversion systems.

Quality and Reliability

STMicroelectronics ensures that the STL13N65M2, like all of their products, meets the highest quality and reliability standards. The device is subjected to rigorous testing and quality control measures, ensuring that it performs to its specifications under the most demanding conditions. Customers can rely on the STL13N65M2 to deliver consistent performance and longevity, making it a smart choice for designers looking to create durable and efficient electronic products.

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Pricing & Ordering (USD)

Quantity Unit Price Ext. Price
40+ $1.2962 $51.8480
95+ $1.0636 $101.0420
150+ $1.0304 $154.5600
205+ $0.9971 $204.4055
260+ $0.9639 $250.6140
350+ $0.8642 $302.4700
* The above prices does not include taxes and freight rates, which will be calculated on the order pages.
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Availability: 3,000 pieces
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