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STP35N60DM2

Part No STP35N60DM2
Manufacturer STMicroelectronics
Catalog FETs - Single
Description Extremely high dv/dt ruggedness | MOSFET N-CH 600V 28A
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer STMicroelectronics
Packaging Tube
Transistor Polarity N-Channel
Technology MOSFET
Vds - Drain-Source Breakdown Voltage 600V
Id - Continuous Drain Current 28A
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Maximum) at Id, Vgs 110mOhm at 14A, 10V
Gate Source Voltage(th) (Maximum) at Id 5V at 250μA
Gate Charge (Qg) (Maximum) at Vgs 54nC at 10V
Gate Source Voltage (Maximum) ±25V
Input Capacitance (Ciss) (Maximum) at Vds 2400pF at 100V
Power Dissipation (Maximum) 210W
Temperature Range - Operating -55°C ~ 150°C
Mounting Style Through Hole
Supplier Device Package TO-220
Manufacturer Package TO-220-3
Manufacturer Pack Quantity 50
MSL Level 1 (Unlimited)
Win Source Part Number 1261727-STP35N60DM2
Manufacturer Homepage www.st.com
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian STP35N60DM2 CAD Model

Description

STP35N60DM2 - High-Efficiency MOSFET by STMicroelectronics

The STP35N60DM2 is a state-of-the-art power MOSFET designed and manufactured by STMicroelectronics, a global semiconductor leader known for their innovative and reliable electronic components. This particular MOSFET is part of the MDmesh™ DM2 series, which is renowned for its excellent energy efficiency and performance in a wide range of applications.

Key Features

  • Advanced Technology: The STP35N60DM2 utilizes STMicroelectronics' second generation MDmesh™ technology. This tech combines the benefits of reduced on-resistance, high dv/dt capability, and fast switching speeds.
  • High Voltage Capability: With a drain-source voltage (V<sub>DS) of 600V, this MOSFET can handle high-voltage applications with ease, making it suitable for industrial, consumer, and lighting applications.
  • Low On-Resistance: The device features an on-resistance (R<sub>DS(on)) of just 0.135 Ω, which translates to reduced conduction losses and improved overall efficiency.
  • High Current Rating: A continuous drain current (I<sub>D) of 35A ensures the MOSFET can manage significant power levels, appropriate for demanding power applications.
  • Reduced Gate Charge: The low gate charge (Q<sub>g) minimizes the power required to switch the device on and off, further enhancing its efficiency.

Applications

The versatility of the STP35N60DM2 makes it an excellent choice for a broad spectrum of applications. It is particularly well-suited for:

  • Switch Mode Power Supplies (SMPS)
  • LED Lighting
  • High-Efficiency DC-DC Converters
  • Welding Equipment
  • Uninterruptible Power Supplies (UPS)
  • Motor Control Circuits

Package and Quality Assurance

The STP35N60DM2 is housed in a TO-220 package, which is designed for optimal thermal and electrical performance. Furthermore, like all STMicroelectronics products, this MOSFET is subjected to rigorous testing and quality control procedures, ensuring reliability and performance in even the most challenging conditions.

For engineers and designers looking for a robust and efficient high-voltage MOSFET, the STP35N60DM2 offers a compelling solution backed by STMicroelectronics' reputation for quality and innovation.

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Pricing & Ordering

Quantity Unit Price Ext. Price
14+ $3.6509 $51.1126
34+ $2.9957 $101.8538
52+ $2.9020 $150.9040
72+ $2.8084 $202.2048
93+ $2.7148 $252.4764
124+ $2.4340 $301.8160
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 5,000 pieces
MOQ: 14 pcs
Order Increment : 1 pcs
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