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STTH4R02FP

Part No STTH4R02FP
Manufacturer STMicroelectronics
Catalog Diodes, Rectifiers - Single
Description Ultrafast recovery diode | DIODE GEN PURP 200V 4A TO220FP
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer STMicroelectronics
Packaging Tube
Status Obsolete
Diode Type Standard
Voltage - DC Reverse (Vr) (Maximum) 200V
Current - Average Rectified (Io) 4A
Voltage - Forward (Vf) (Maximum) at If 1.05V at 4A
Speed Fast Recovery = 200mA (Io)
Reverse Recovery Time (trr) 30ns
Current - Reverse Leakage at Vr 3μA at 200V
Mounting Style Through Hole
Manufacturer Package TO-220-2 Full Pack
Supplier Device Package TO-220FPAC
Operating Temperature - Junction 175°C (Maximum)
Family Part Number STTH4R02
Manufacturer Pack Quantity 50
MSL Level 1 (Unlimited)
Win Source Part Number 1262197-STTH4R02FP
Manufacturer Homepage www.st.com
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian STTH4R02FP CAD Model

Description

STTH4R02FP - Ultrafast Recovery Diode from STMicroelectronics

The STTH4R02FP is a high-performance ultrafast recovery diode designed by STMicroelectronics, tailored for applications that demand efficient and reliable power management. This component is particularly well-suited for switch-mode power supplies and high-frequency converters, where it significantly improves the overall efficiency and thermal management of the system.

Constructed with robust and advanced silicon technology, the STTH4R02FP offers a combination of reduced conduction losses and minimized switching losses. The diode features an impressive average forward current of 4 A, making it capable of handling moderate power levels with ease. With a reverse voltage rating of 200 V, it provides a comfortable margin for most power electronic applications, ensuring safe operation under various conditions.

The ultrafast recovery time of this diode is one of its standout characteristics. With a recovery time as low as 25 ns, the STTH4R02FP minimizes the energy loss during the switching process, which is critical for high-efficiency power supplies. This speed also reduces electromagnetic interference (EMI), a crucial factor in the design of electronic systems that must comply with strict EMI regulations.

Another key feature of the STTH4R02FP is its low forward voltage drop, which translates into reduced power dissipation and improved thermal performance. This characteristic is especially beneficial in applications where diodes are subjected to continuous operation or high current pulses.

The package of the STTH4R02FP is the TO-220FP, a fully molded isolated package that offers excellent thermal and electrical capabilities. This package ensures easy mounting on a heat sink for enhanced thermal dissipation, and its isolation allows for direct heat sink mounting without additional insulating hardware, simplifying the assembly process and reducing costs.

In conclusion, the STTH4R02FP ultrafast recovery diode from STMicroelectronics is a reliable and efficient solution for designers looking to improve the performance of their power conversion systems. With its fast recovery time, low forward voltage drop, and robust package, this diode stands out as a prime choice for modern high-speed switching applications.

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