The Toshiba HN1B04FU-Y(TE85L,F) is a P-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for power management applications. It features a low on-resistance (Rds(on)), which minimizes power loss and improves efficiency in switching circuits. This MOSFET is available in a small surface-mount package, making it suitable for space-constrained applications.

Applications

• DC-DC converters
• Load switches
• Power management circuits in portable devices
• Battery charging circuits

Features

• P-channel MOSFET
• Low on-resistance (Rds(on))
• Surface-mount package
• Low gate charge
• High-speed switching

Benefits

• Improved power efficiency due to low on-resistance.
• Reduced power loss and heat generation.
• Compact size for space-constrained applications.
• Fast switching speed for efficient power conversion.

Technical Specifications

The HN1B04FU-Y(TE85L,F) has a drain-source voltage (Vds) rating of -30V and a drain current (Id) rating of -1.5A. The on-resistance (Rds(on)) is typically 145 mΩ at Vgs = -10V. It is packaged in a SOT-23F package. It is RoHS compliant. Designed for low voltage operation.