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2N7002K-T1-GE3 Vishay 2N7002K-T1-GE3 Real Image 2N7002K-T1-GE3 label picture 2 2N7002K-T1-GE3 label picture 3 2N7002K-T1-GE3 real image 2N7002K-T1-GE3 real image230 2N7002K-T1-GE3 real image231 2N7002K-T1-GE3 real image232 2N7002K-T1-GE3 Real Image
Same model may have multiple batches, images only for reference.
2N7002K-T1-GE3 Vishay 2N7002K-T1-GE3 Real Image 2N7002K-T1-GE3 label picture 2 2N7002K-T1-GE3 label picture 3 2N7002K-T1-GE3 real image 2N7002K-T1-GE3 real image230 2N7002K-T1-GE3 real image231 2N7002K-T1-GE3 real image232 2N7002K-T1-GE3 Real Image
2N7002K-T1-GE3 Vishay 2N7002K-T1-GE3 Real Image 2N7002K-T1-GE3 label picture 2 2N7002K-T1-GE3 label picture 3 2N7002K-T1-GE3 real image 2N7002K-T1-GE3 real image230 2N7002K-T1-GE3 real image231 2N7002K-T1-GE3 real image232 2N7002K-T1-GE3 Real Image
Same model may have multiple batches, images only for reference.

2N7002K-T1-GE3

Part No 2N7002K-T1-GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 60V 300MA SOT-23
Datasheet
2N7002K-T1-GE3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 60V
Continuous Drain Current at 25°C 300mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2.5V @ 250μA
Max Gate Charge 0.6nC @ 4.5V
Max Input Capacitance 30pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 350mW (Ta)
Maximum Rds On at Id,Vgs 2 Ohm @ 500mA, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package TO-236
Dimension TO-236-3, SC-59, SOT-23-3
Win Source Part Number 005725-2N7002K-T1-GE3
Family Name 2N7002K
Introduction Date August 09, 2001
ECCN EAR99
Country of Origin Thailand
Halogen Free Compliant
Estimated EOL Date 2024
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian 2N7002K-T1-GE3 CAD Model

Description

2N7002K-T1-GE3 MOSFET

The 2N7002K-T1-GE3 is an N-channel MOSFET designed for high-speed switching applications. Manufactured with cutting-edge technology, this component offers low on-state resistance, making it ideal for circuits requiring efficient power management.

Features and Benefits

  • Low On-Resistance: Provides better conduction efficiency.
  • High-Speed Switching: Enables rapid response in switching applications.
  • Compact Package: Facilitates use in space-constrained designs.
  • Robust Design: Ensures reliable performance over a wide temperature range.

Applications

  • Power Management Systems
  • DC-DC Converters
  • Switching Regulators
  • Load Switch Applications

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Pricing & Ordering

Quantity Unit Price Ext. Price
1,620+ $0.0309 $50.0580
3,450+ $0.0290 $100.0500
5,360+ $0.0280 $150.0800
7,695+ $0.0260 $200.0700
9,965+ $0.0251 $250.1215
12,450+ $0.0241 $300.0450
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 325,445 pieces
MOQ: 1620 pcs
Order Increment : 1 pcs
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