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2SC3355

Part No 2SC3355
Manufacturer CEL
Catalog RF Transistors (BJT)
Description HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR
Sample
Rohs State Need to verify
ECAD Module
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Category Discrete Semiconductor Products
Family RF Transistors(BJT)
Manufacturer CEL
Win Source Part Number 155734-2SC3355
Popularity Medium
Supply and Demand Status Limited
Family Name 2SC3355
Introduction Date March 23, 1997
ECCN EAR99
Estimated EOL Date Obsolete / End of life
Ultra Librarian 3D Model Ultra Librarian 2SC3355 CAD Model

Description

Product Description

The 2SC3355 is a high-frequency, NPN bipolar junction transistor specially designed for RF applications. Its electrical characteristics are optimized for consistent performance in RF systems, offering reliability in tasks demanding precision and stability in high-frequency domains.

Features and Benefits

  • High Frequency Performance: Delivers exceptional results in radio frequency applications.
  • Low Output Capacitance: Reduces the risk of high-frequency signal distortion.
  • Durability: Built to withstand extensive operational demands in RF technology.

Application Areas

  • Wireless Communication Devices
  • High-Performance RF Amplifiers
  • Oscillator Circuits

Additional Details

The 2SC3355's emphasis on durability and efficiency ensures its utility in wireless transmission technology and equipment requiring high-frequency operation. While specific manufacturer information is not delineated, the component's specifications are designed to meet and exceed industry expectations, fostering trust in professional RF engineering arenas.

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Pricing & Ordering

Quantity Unit Price Ext. Price
285+ $0.2033 $57.9405
690+ $0.1675 $115.5750
1,075+ $0.1617 $173.8275
1,475+ $0.1571 $231.7225
1,910+ $0.1513 $288.9830
2,545+ $0.1363 $346.8835
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 396 pieces
MOQ: 285 pcs
Order Increment : 1 pcs
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Shipping Information

Shipped from HK warehouse
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