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MAT02EHZ

Part No MAT02EHZ
Manufacturer Analog Devices Inc.
Catalog RF Transistors (BJT)
Description Trans GP BJT NPN 40V 0.02A 6-Pin TO-78
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Case / Package TO-78
Collector Base Voltage (VCBO) 40 V
Collector Emitter Voltage (VCEO) 40 V
Frequency 200 MHz
Max Collector Current 20 mA
Max Operating Temperature 85 °C
Max Power Dissipation 1.8 W
Min Operating Temperature -25 °C
Mount Through Hole
Number of Elements 2
Number of Pins 6
Polarity NPN
Power Dissipation 1.8 W
Radiation Hardening No
RoHS Compliant
Win Source Part Number 1140199-MAT02EHZ
Categories RF Transistors(BJT)
Manufacturer Analog Devices Inc.
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian MAT02EHZ CAD Model

Description

Product Overview: MAT02EHZ from Analog Devices Inc.

The MAT02EHZ is a high-precision, dual monolithic NPN transistor crafted by Analog Devices Inc., a company renowned for its expertise in high-performance analog, mixed-signal, and digital signal processing (DSP) integrated circuits (ICs). This product offers exceptional performance for applications requiring matched transistor pairs.

Key Features:

  • Outstanding Transistor Matching: The MAT02EHZ boasts excellent matching characteristics, with a maximum offset voltage of 500 µV and a maximum offset voltage drift of 5 µV/°C, ensuring consistent performance across the two transistors.
  • High Gain: With a minimum current gain (hFE) of 100, this transistor pair provides robust signal amplification, making it suitable for precision amplifiers and other sensitive circuits.
  • Low Noise: The device exhibits low noise performance, with a typical value of 1.0 nV/√Hz at 1 kHz, which is ideal for audio applications and signal processing where clarity and signal integrity are paramount.
  • Wide Operating Range: The MAT02EHZ operates over a broad range of collector currents from 1 µA to 10 mA, providing flexibility for a variety of circuit designs.

Applications:

The precise nature of the MAT02EHZ makes it particularly well-suited for a range of applications, including:

  • Instrumentation amplifiers
  • Voltage references
  • Current mirrors
  • Logarithmic amplifiers
  • Temperature transducers
  • Analog computation

Product Specifications:

Parameter Value Configuration Dual NPN Collector-Emitter Voltage (VCEO) 36 V Collector Base Voltage (VCBO) 50 V Emitter Base Voltage (VEBO) 3 V Collector Current (IC) 20 mA

For designers and engineers looking for a reliable transistor pair with high precision and low noise, the MAT02EHZ from Analog Devices Inc. is an excellent choice. With its superior matching characteristics and stable performance, it is a cornerstone component for any application that demands the highest level of accuracy and consistency.

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