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Same model may have multiple batches, images only for reference.
SI5401DC-T1-GE3 Real Image
Same model may have multiple batches, images only for reference.

SI5401DC-T1-GE3

Part No SI5401DC-T1-GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 20V 5.2A 1206-8
Datasheet
SI5401DC-T1-GE3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Obsolete(EOL)
Polarity P-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 20V
Continuous Drain Current at 25°C 5.2A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4.5V
Gate-Source Threshold Voltage 1V @ 250μA
Max Gate Charge 25nC @ 4.5V
Maximum Gate-Source Voltage ±8V
Power Dissipation (Max) 1.3W (Ta)
Maximum Rds On at Id,Vgs 32 mOhm @ 5.2A, 4.5V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 1206-8 ChipFET
Dimension 8-SMD, Flat Lead
Win Source Part Number 064530-SI5401DC-T1-GE3
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian SI5401DC-T1-GE3 CAD Model

Description

The SI5401DC-T1-GE3 is an obsolete (EOL) electronic component manufactured by Vishay.

  • Technology: P-channel MOSFET
  • Maximum Power Dissipation: 1.3W (Ta)
  • Package: 1206-8 ChipFET
  • Dimension: 8-SMD, Flat Lead
  • Drain-Source Breakdown Voltage: 20V

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Pricing & Ordering

Quantity Unit Price Ext. Price
250+ $0.2356 $58.9000
600+ $0.1940 $116.4000
930+ $0.1871 $174.0030
1,275+ $0.1813 $231.1575
1,645+ $0.1756 $288.8620
2,210+ $0.1571 $347.1910
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 6,000 pieces
MOQ: 250 pcs
Order Increment : 1 pcs
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