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F8NK100Z

Part No F8NK100Z
Manufacturer STMicroelectronics
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 1000V 6.5A TO220FP
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer STMicroelectronics
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 1000V (1kV)
Continuous Drain Current at 25°C 6.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4.5V @ 100μA
Max Gate Charge 102nC @ 10V
Max Input Capacitance 2180pF @ 25V
Maximum Gate-Source Voltage ±30V
Power Dissipation (Max) 40W (Tc)
Maximum Rds On at Id,Vgs 1.85 Ohm @ 3.15A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package TO-220FP
Dimension TO-220-3 Full Pack
Win Source Part Number 066706-F8NK100Z
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian F8NK100Z CAD Model

Description

The F8NK100Z is a high-performance N-Channel MOSFET produced by STMicroelectronics, a global semiconductor leader known for its cutting-edge technology and innovative product solutions. This power MOSFET is designed to handle high current and high voltage applications with efficiency and reliability, making it an ideal choice for advanced power management systems.

With its robust construction, the F8NK100Z features a maximum drain-source voltage (V<sub>DS) of 1000V, which ensures that the device can handle high voltage conditions without compromising performance. This voltage rating, combined with a maximum continuous drain current (I<sub>D) of 8A, allows the F8NK100Z to drive substantial loads with ease.

The device boasts a low on-resistance (R<sub>DS(on)) of 1.2Ω, contributing to its high efficiency by minimizing power loss during operation. This characteristic is particularly important in applications where power efficiency is critical, such as in switching power supplies, lighting systems, and industrial motor controls.

The F8NK100Z is also equipped with a fast switching speed, a feature that enhances the performance in high-frequency circuits and applications. This rapid switching capability ensures that the MOSFET can respond quickly to control signals, thus improving the overall responsiveness of the system it is integrated into.

STMicroelectronics has designed the F8NK100Z with a TO-220 package, which is widely used and recognized for its ease of mounting and good thermal performance. The TO-220 package allows for efficient heat dissipation, which is vital for maintaining stability and longevity in high-power applications.

In summary, the F8NK100Z from STMicroelectronics is a powerful and reliable N-Channel MOSFET that offers a combination of high voltage and current handling capabilities, low on-resistance, fast switching speed, and effective thermal management. Its versatile features make it suitable for a variety of demanding applications, ensuring optimal performance in power conversion and management tasks.

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Pricing & Ordering

Quantity Unit Price Ext. Price
15+ $3.9201 $58.8015
36+ $3.2167 $115.8012
56+ $3.1162 $174.5072
77+ $3.0157 $232.2089
100+ $2.9152 $291.5200
133+ $2.6138 $347.6354
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 8,660 pieces
MOQ: 15 pcs
Order Increment : 1 pcs
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