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F6NM60N

Part No F6NM60N
Manufacturer STMicroelectronics
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 600V 4.6A TO-220FP
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer STMicroelectronics
Packaging Tube/Rail
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 600V
Continuous Drain Current at 25°C 4.6A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 13nC @ 10V
Max Input Capacitance 420pF @ 50V
Maximum Gate-Source Voltage ±25V
Power Dissipation (Max) 20W (Tc)
Maximum Rds On at Id,Vgs 920 mOhm @ 2.3A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package TO-220FP
Dimension TO-220-3 Full Pack
Win Source Part Number 066705-F6NM60N
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian F6NM60N CAD Model

Description

The F6NM60N is a state-of-the-art Power MOSFET from STMicroelectronics, designed to meet the high efficiency and reliability standards required in modern power electronic applications. This device is part of ST's STPOWER product line, which is renowned for its performance in power conversion and management. The F6NM60N is specifically engineered to address the needs of applications such as switch-mode power supplies (SMPS), lighting, DC-AC inverters, and motor control.

Key Features

  • High Voltage Capability: The F6NM60N has a drain-source voltage (V<sub>DS) of 600V, making it suitable for high voltage applications.
  • Low On-Resistance: With an on-resistance (R<sub>DS(on)) as low as 0.65Ω, this MOSFET ensures minimal power loss and high efficiency during operation.
  • High Current Rating: The device can handle a continuous drain current (I<sub>D) of up to 6A, accommodating substantial power handling requirements.
  • Fast Switching Performance: The F6NM60N exhibits fast switching characteristics, which is crucial for reducing switching losses and improving the performance of power conversion systems.
  • Enhanced Body Diode: Features an integrated fast recovery body diode, which is optimized for minimal reverse recovery time (t<sub>rr) and reverse recovery charge (Q<sub>rr), enhancing the overall efficiency in applications such as synchronous rectification.

Applications

The versatility of the F6NM60N makes it an ideal choice for a wide range of applications. It is particularly well-suited for:

  • Switch Mode Power Supplies (SMPS)
  • LED Lighting Drivers
  • DC-AC Inverters for Solar Energy Systems
  • Motor Drives and Controllers
  • Power Management Solutions

Quality and Reliability

STMicroelectronics is committed to delivering high-quality products. The F6NM60N is built to ensure long-term reliability and stability in various operating conditions. Its robust design is aimed at providing a long operational lifespan, even in the most demanding environments.

Environmental Compliance

The F6NM60N is compliant with RoHS and other environmental standards, reflecting STMicroelectronics' dedication to environmental sustainability. Users can be confident that they are choosing a product that meets current environmental directives for electronic components.

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