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IRF7853PBF

Part No IRF7853PBF
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 100V 8.3A 8-SOIC
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Not For New Designs
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 100V
Continuous Drain Current at 25°C 8.3A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4.9V @ 100μA
Max Gate Charge 39nC @ 10V
Max Input Capacitance 1640pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 2.5W (Ta)
Maximum Rds On at Id,Vgs 18 mOhm @ 8.3A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 8-SO
Dimension 8-SOIC (0.154", 3.90mm Width)
Win Source Part Number 261820-F7853
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian IRF7853PBF CAD Model

Description

Overview of IRF7853PBF

The IRF7853PBF is a power MOSFET designed to provide superior output in high-current applications. Its robust construction and premium materials make it a preferred choice for demanding power electronics applications.

Applications/Projects

  • DC-DC converters
  • Motor control applications
  • Inverter systems
  • High-frequency power systems

Features and Benefits

  • High current capacity
  • Low on-state resistance
  • Fast switching capabilities
  • Improved thermal performance

Additional Details

Engineered to excel in high-performance environments, the IRF7853PBF provides outstanding efficiency and ruggedness, making it suitable for power-intensive applications.

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Pricing & Ordering

Quantity Unit Price Ext. Price
95+ $0.5419 $51.4805
200+ $0.5070 $101.4000
310+ $0.4895 $151.7450
445+ $0.4545 $202.2525
575+ $0.4371 $251.3325
715+ $0.4196 $300.0140
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 35,041 pieces
MOQ: 95 pcs
Order Increment : 1 pcs
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Shipping Information

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